tpcf8201 TOSHIBA Semiconductor CORPORATION, tpcf8201 Datasheet - Page 3

• Manufacturer Part Number: tpcf8201
• Description: Field Effect Transistor Silicon N Channel Mos Type U-mosiii
• Manufacturer: TOSHIBA Semiconductor CORPORATION

Electrical Characteristics
Source-Drain Ratings and Characteristics
Gate leakage current
Drain cut-off current
Drain-source breakdown voltage
Gate threshold voltage
Drain-source ON resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Switching time
Total gate charge
(gate-source plus gate-drain)
Gate-source charge1
Gate-drain (“miller”) charge
Drain reverse current
Forward voltage (diode)
Characteristics
Characteristics
Rise time
Turn-on time
Fall time
Turn-off time
Pulse (Note 1)
(Ta = 25°C)
V
V
R
R
R
Symbol
Symbol
(BR) DSS
(BR) DSX
DS (ON)
DS (ON)
DS (ON)
V
Q
I
I
C
I
C
|Y
C
Q
GSS
DSS
DRP
V
t
t
Q
DSF
oss
on
off
gs1
t
t
iss
rss
gd
th
fs
r
f
g
|
V
V
I
I
V
V
V
V
V
V
Duty < = 1%, t
V
I
I
D
D
D
DR
GS
DS
DS
GS
GS
GS
DS
DS
DD
V
= 10 mA, V
= 10 mA, V
= 3.0 A
GS
3
= 3.0 A, V
(Ta = 25°C)
= ±10 V, V
= 20 V, V
= 10 V, I
= 2.0 V, I
= 2.5 V, I
= 4.5 V, I
= 10 V, I
= 10 V, V
∼ − 16 V, V
5 V
0 V
Test Condition
Test Condition
w
D
D
GS
GS
D
D
D
GS
GS
GS
= 10 μs
GS
= 200 μA
= 1.5 A
DS
= 1.5 A
= 1.5 A
= 1.5 A
⎯
= 0 V
= -12 V
= 0 V
= 0 V
= 0 V, f = 1 MHz
= 5 V,
= 0 V
V
I
D
DD
= 1.5 A
∼ − 10 V
Min
Min
0.5
2.7
20
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
8
Typ.
Typ.
590
5.4
3.0
7.5
4.4
7.5
1.3
2.1
62
50
38
70
85
26
⎯
⎯
⎯
⎯
⎯
⎯
⎯
TPCF8201
2007-01-16
Max
Max
±10
100
-1.2
1.2
10
66
49
12
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Unit
Unit
mΩ
nC
μA
μA
pF
ns
A
V
V
V
S