tpcf8201 TOSHIBA Semiconductor CORPORATION, tpcf8201 Datasheet - Page 5

• Manufacturer Part Number: tpcf8201
• Description: Field Effect Transistor Silicon N Channel Mos Type U-mosiii
• Manufacturer: TOSHIBA Semiconductor CORPORATION

1000
120
100
100
1.6
1.2
0.8
0.4
80
60
20
10
40
−80
2
0
0
0.1
0
t = 5 s
Common source
V GS = 0 V
f = 1 MHz
Ta = 25°C
(1)
(2)
(3)
(4)
Common source
Pulse test
V GS = 4.5 V
−40
Drain-source voltage V DS (V)
I D = 3A
Ambient temperature Ta (°C)
Ambient temperature Ta (°C)
40
I D = 1.5A,0.75A
Capacitance – V
Device mounted on a glass-epoxy board (a) (Note 2a)
(1) Single-device operation (Note 3a)
(2) Single-device value at dual operation (Note 3b)
Device mounted on a glass-epoxy board (b) (Note 2b)
(3) Single-device operation (Note 3a)
(4) Single-device value at dual operation (Note 3b)
0
1
R
I D = 3A,1.5A,0.75A
DS (ON)
P
D
40
80
3
– Ta
5
– Ta
V GS = 2.0 V
I D = 3A,1.5A,0.75A
80
10
DS
C rss
120
C iss
C oss
V GS = 2.5 V
120
30 50
160
100
160
5
0.5
0.3
0.1
1.2
0.8
0.6
0.4
0.2
10
20
16
12
−80
5
3
1
1
0
8
4
0
0
0
Common source
V DS = 10 V
I D = 200μA
Pulse test
10
−40
V DS
Drain-source voltage V DS (V)
Ambient temperature Ta (°C)
2
Total gate charge Q g (nC)
Dynamic input / output
2.5
−0.4
0
characteristics
I
4
DR
V
8
th
– V
40
2.0
– Ta
DS
6
V GS
4
Common source
I D = 3 A
Ta = 25°C
Pulse test
−0.8
80
Common source
V GS = 0 V
V DD = 16 V
Ta = 25°C
Pulse test
8
120
TPCF8201
2007-01-16
−1.2
160
10
4
2
6
0