tpcf8201 TOSHIBA Semiconductor CORPORATION, tpcf8201 Datasheet - Page 4

• Manufacturer Part Number: tpcf8201
• Description: Field Effect Transistor Silicon N Channel Mos Type U-mosiii
• Manufacturer: TOSHIBA Semiconductor CORPORATION

100
10
10
5
4
3
2
1
0
8
6
4
2
0
1
0.1
0
0
6
Common source
V DS = 10 V
Pulse test
10
Drain-source voltage V DS
0.2
Gate-source voltage V GS
1
100
4
5
Drain current I D (A)
2
0.4
2
Ta = −55°C
⎪Y
I
I
D
D
25
Ta = −55°C
fs
– V
– V
⎪ – I
1
DS
GS
1.9
0.6
D
3
100
Common source
V DS = 10 V
Pulse test
Common source
Ta = 25°C
Pulse test
V GS = 1.4 V
(V)
(V)
0.8
4
25
1.7
1.5
1.8
1.6
10
1
5
4
1000
100
0.8
0.6
0.4
0.2
10
10
2
8
6
4
0
1
0
1
0.1
0
0
10
0.75
Common source
Ta = 25°C
Pulse test
3
Gate-source voltage
Drain-source voltage V DS
1
2
2.1
2.5
Drain current I D (A)
R
2
V
DS (ON)
2
4
I
DS
D
1.5
– V
– V
1
DS
1.9
GS
– I
Common source
Ta = 25°C
Pulse test
3
6
V GS
Common source
Ta = 25℃
Pulse test
D
V GS = 4.5V
1.8
2.0
1.7
(V)
(V)
I D = 3 A
V GS = 1.4V
8
4
TPCF8201
1.6
2007-01-16
1.5
10
10
5