tpcp8402 TOSHIBA Semiconductor CORPORATION, tpcp8402 Datasheet - Page 9

• Manufacturer Part Number: tpcp8402
• Description: Toshiba Field Effect Transistor Silicon P, N Channel Mos Type U-mos Iv / U-mos Iii
• Manufacturer: TOSHIBA Semiconductor CORPORATION

N-ch
1000
120
100
100
60
40
80
20
10
2.0
1.6
1.2
0.8
0.4
−80
0
1
0.1
0
0
Common source
V GS = 0 V
f = 1 MHz
Ta = 25°C
Common source
Pulse test
(4)
(1)
(2)
(3)
25
0.3
Drain−source voltage V
−40
Ambient temperature Ta (°C)
Ambient temperature Ta (°C)
50
Capacitance – V
V GS = 4.5V
0
1
R
75
I D = 4, 2, 1A
DS (ON)
Device mounted on a glass-epoxy
board (a)
Device mounted on a glass-epoxy
board (b)
t = 5 s
P
(3) Single-device operation
(4) Single-device value at dual
(1) Single-device operation (Note 3a)
(2) Single-device value at dual
D
100
40
operation
3
operation
– Ta
5
– Ta
125
10
80
V GS = 10V
DS
2A
DS
150
C oss
C rss
C iss
I D = 4A
(V)
120
30 50
1A
(Note 2a)
(Note 3b)
(Note 2b)
(Note 3a)
(Note 3b)
175
160
100
200
9
0.5
0.3
0.1
25
30
20
15
10
10
2
−80
5
3
1
3
1
0
5
0
0
0
12
6
Common source
V DS = 10 V
I D = 200μA
Pulse test
V DS
V DD = 24V
-0.2
10
Drain−source voltage V
−40
Ambient temperature Ta (°C)
Total gate charge Q
4
Dynamic input/output
-0.4
0
characteristics
5.0
I
DR
V
th
24
-0.6
– V
40
8
– Ta
V DD = 6V
DS
3.0
12
1.0
-0.8
80
g
DS
Common source
I D = 4.0A
Ta = 25°C
Pulse test
Common source
Ta = 25°C
Pulse test
(nC)
12
V GS = 0 V
(V)
-1.0
120
V GS
TPCP8402
2006-11-13
-1.2
160
16
10
15
5
0