tpcp8402 TOSHIBA Semiconductor CORPORATION, tpcp8402 Datasheet - Page 4

• Manufacturer Part Number: tpcp8402
• Description: Toshiba Field Effect Transistor Silicon P, N Channel Mos Type U-mos Iv / U-mos Iii
• Manufacturer: TOSHIBA Semiconductor CORPORATION

N-ch
Electrical Characteristics
Source-Drain Ratings and Characteristics
Gate leakage current
Drain cut-off current
Drain-source breakdown
voltage
Gate threshold voltage
Drain-source ON resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Switching time
Total gate charge
(gate-source plus gate-drain)
Gate-source charge 1
Gate-drain (“miller”) charge
Drain reverse current
Forward voltage (diode)
Characteristics
Characteristics
Rise time
Turn-on time
Fall time
Turn-off time
Pulse (Note 1)
(Ta = 25°C)
V
V
R
Symbol
Symbol
(BR) DSS
(BR) DSX
DS (ON)
V
Q
I
I
C
I
C
|Y
C
Q
GSS
DSS
DRP
V
t
t
Q
DSF
oss
on
off
gs1
t
t
iss
rss
gd
th
fs
r
f
g
|
V
V
I
I
V
V
V
V
V
Duty < = 1%, t
V
I
D
D
DR
V
GS
DS
DS
GS
GS
DS
DS
DD
GS
= 10 mA, V
= 10 mA, V
4
= 4.2 A, V
(Ta = 25°C)
= 30 V, V
= 10 V, I
= 10 V, I
= 10 V, V
= ±16 V, V
= 4.5 V, I
= 10 V, I
≈ 24 V, V
10 V
0 V
Test Condition
Test Condition
w
D
D
D
GS
GS
D
GS
GS
GS
GS
= 10 μs
= 1 mA
= 2.1 A
= 2.1 A
DS
= 2.1 A
⎯
= 0 V
= −20 V
= 0 V
= 0 V
= 0 V, f = 1 MHz
= 10 V, I
= 0 V
V
I
D
DD
= 2.1 A
∼ − 15 V
D
= 6 A
V
OUT
Min
Min
1.3
3.5
30
15
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Typ.
Typ.
470
7.0
5.2
8.3
4.0
1.7
2.4
⎯
⎯
⎯
⎯
⎯
58
38
60
80
22
10
⎯
⎯
TPCP8402
2006-11-13
Max
Max
16.8
−1.2
±10
2.5
10
77
50
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Unit
Unit
mΩ
μA
μA
nC
pF
ns
V
V
S
A
V