tpcp8402 TOSHIBA Semiconductor CORPORATION, tpcp8402 Datasheet - Page 3

• Manufacturer Part Number: tpcp8402
• Description: Toshiba Field Effect Transistor Silicon P, N Channel Mos Type U-mos Iv / U-mos Iii
• Manufacturer: TOSHIBA Semiconductor CORPORATION

P-ch
Electrical Characteristics
Source-Drain Ratings and Characteristics
Gate leakage current
Drain cut-off current
Drain-source breakdown voltage
Gate threshold voltage
Drain-source ON resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Switching time
Total gate charge
(gate-source plus gate-drain)
Gate-source charge 1
Gate-drain (“miller”) charge
Drain reverse current
Forward voltage (diode)
Characteristics
Characteristics
Rise time
Turn-on time
Fall time
Turn-off time
Pulse (Note 1)
(Ta = 25°C)
V
V
R
Symbol
Symbol
(BR) DSS
(BR) DSX
DS (ON)
V
Q
I
I
C
I
C
|Y
C
Q
GSS
DSS
DRP
V
t
t
Q
DSF
oss
on
off
gs1
t
t
iss
rss
gd
th
fs
r
f
g
|
V
V
I
I
V
V
V
V
V
Duty < = 1%, t
V
I
I
D
D
D
DR
V
GS
DS
DS
GS
GS
DS
DS
DD
= −10 mA, V
= −10 mA, V
GS
= −3.4 A
3
= −3.4 A, V
 − 10 V
(Ta = 25°C)
= ±16 V, V
= −30 V, V
= −10 V, I
= −4.5 V, I
= −10 V, I
= −10 V, I
= −10 V, V
∼ − −24 V, V
0 V
Test Condition
Test Condition
w
= 10 μs
D
D
D
GS
GS
GS
D
DS
GS
GS
GS
= −1 mA
= −1.7 A
= −1.7 A
⎯
= −1.7 A
= 0 V
= 20 V
= 0 V
= 0 V
= 0 V
= 0 V, f = 1 MHz
= −10 V,
V
I
D
DD
= −1.7 A
∼ − −15 V
V
OUT
−0.8
Min
−30
−15
Min
3.0
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Typ.
Typ.
600
6.0
5.3
8.4
1.4
2.7
80
60
60
70
12
34
14
⎯
⎯
⎯
⎯
⎯
⎯
⎯
TPCP8402
2006-11-13
−13.6
−2.0
Max
Max
±10
105
1.2
10
72
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Unit
Unit
mΩ
nC
μA
μA
pF
ns
A
V
V
V
S