tpcp8402 TOSHIBA Semiconductor CORPORATION, tpcp8402 Datasheet - Page 6

• Manufacturer Part Number: tpcp8402
• Description: Toshiba Field Effect Transistor Silicon P, N Channel Mos Type U-mos Iv / U-mos Iii
• Manufacturer: TOSHIBA Semiconductor CORPORATION

P-ch
10000
1000
120
150
100
2.0
1.6
1.2
0.8
0.4
90
60
30
10
−80
0
-0.1
0
0
Common source
V GS = 0 V
f = 1 MHz
Ta = 25°C
(1)
(2)
(3)
(4)
25
V GS = -4.5V
−40
Drain−source voltage V
Ambient temperature Ta (°C)
Ambient temperature Ta (°C)
I D = -0.8A, -1.5A, -4.5A
50
V GS = -10V
Capacitance – V
0
-1
R
75
DS (ON)
Device mounted on a glass-epoxy
board (a)
Device mounted on a glass-epoxy
board (b)
t = 5 s
P
(3) Single-device operation
(4) Single-device value at dual
(1) Single-device operation (Note 3a)
(2) Single-device value at dual
D
100
operation
operation
40
-3 -5
– Ta
I D = -0.8A, -1.5A, -4.5A
– Ta
125
C iss
-10
80
C rss
DS
C oss
Common source
Pulse test
DS
150
120
(V)
-30 -50 -100
(Note 2a)
(Note 3b)
(Note 2b)
(Note 3a)
(Note 3b)
175
160
200
6
-2.0
-1.5
-1.0
-0.5
-30
-15
-10
0.5
0.3
0.1
-25
-20
10
-5
5
3
1
−80
0
0
0
0
-6
-12
Common source
V DS = -10 V
I D = -200μA
Pulse test
V DS
V DD = -24V
-10
Drain−source voltage V
−40
Ambient temperature Ta (°C)
0.3
Total gate charge Q
4
-5.0
Dynamic input/output
-3.0
0
characteristics
0.6
I
DR
V
th
-1.0
-24
V DD = -6V
– V
40
8
– Ta
DS
0.9
-12
V GS = 0 V
80
g
Common source
Ta = 25°C
Pulse test
DS
Common source
I D = -3.2 A
Ta = 25°C
Pulse test
(nC)
12
1.2
(V)
120
V GS
TPCP8402
2006-11-13
1.5
160
16
-15
-10
-5
0