ne856m02 California Eastern Laboratories, ne856m02 Datasheet - Page 6

• Manufacturer Part Number: ne856m02
• Description: Npn Epitaxial Silicon Transistor High Frequency Low Distortion Amplifier
• Manufacturer: California Eastern Laboratories

Note:
1. Gain Calculation:
NE856M02
V
MAG = Maximum Available Gain
MSG = Maximum Stable Gain
NE856M02
TYPICAL COMMON EMITTER SCATTERING PARAMETERS
FREQUENCY
CE
MAG =
(GHz)
0.100
0.200
0.400
0.600
0.800
1.000
1.200
1.400
1.600
1.800
2.000
2.200
2.400
2.600
2.800
3.000
= 10 V, I
|S
|S
-j
j
0
10
10
21
12
|
|
C
(
K ±
-j
= 20 mA
j
25
25
MAG
0.508
0.425
0.384
0.376
0.374
0.374
0.375
0.375
0.375
0.376
0.377
0.378
0.380
0.382
0.385
0.388
K - 1
2
S
3 GHz
S
22
11
-120.5
-156.2
-173.7
).
174.4
164.9
156.8
149.5
142.7
136.2
130.1
123.9
107.0
101.4
118.2
112.6
-j
-78.9
j
50
When K ≤ 1, MAG is undefined and MSG values are used. MSG =
50
ANG
S
3 GHz
11
S
0.1 GHz
11
S
0.1 GHz
29.606
18.715
10.140
MAG
22
-j
6.875
4.168
3.481
1.435
5.192
2.990
2.620
2.337
2.109
1.922
1.770
1.640
1.531
j
100
100
S
21
131.4
110.2
ANG
92.5
82.6
75.0
68.3
62.2
56.6
51.2
46.1
41.2
36.5
32.1
27.8
23.7
19.8
V
Coordinates in Ohms
CE
Frequency in GHz
= 10 V, I
MAG
0.019
0.029
0.043
0.058
0.074
0.090
0.106
0.122
0.137
0.153
0.168
0.183
0.198
0.213
0.227
0.242
S
C
12
= 20 mA
57.0
57.5
62.1
64.6
65.4
65.3
64.5
63.4
61.9
60.3
58.6
56.8
54.8
53.2
51.1
49.1
ANG
180˚
MAG
0.707
0.500
0.373
0.347
0.346
0.356
0.370
0.387
0.406
0.424
0.443
0.461
0.478
0.494
0.508
0.521
225˚
|S
|S
135˚
21
12
(T
S
0.1 GHz
|
|
21
S
A
, K = 1 + | ∆ | - |S
22
= 25°C)
-34.0
-42.7
-45.9
-48.9
-53.4
-58.2
-63.0
-67.7
-71.9
-75.9
-79.4
-82.9
-85.9
-88.8
-91.7
-94.5
ANG
S
3 GHz
21
2 |S
270˚
90˚
2
S
0.1 GHz
12
12
S
11
21
| - |S
2
|
0.43
0.65
0.91
1.01
1.05
1.07
1.07
1.07
1.06
1.05
1.04
1.03
1.01
0.99
0.98
0.97
K
S
3 GHz
22
12
|
45˚
315˚
2
,
∆ = S
32.0
28.1
23.7
20.0
17.1
15.0
13.5
12.3
10.4
11.3
MAG
0˚
(dB)
9.7
9.2
8.9
8.9
8.3
7.7
11
S
22
- S
21
S
12