ne856m02 California Eastern Laboratories, ne856m02 Datasheet - Page 2

• Manufacturer Part Number: ne856m02
• Description: Npn Epitaxial Silicon Transistor High Frequency Low Distortion Amplifier
• Manufacturer: California Eastern Laboratories

ABSOLUTE MAXIMUM RATINGS
Notes:
1. Operation in excess of any one of these parameters may result
2. Device mounted on 0.7 mm X 16 cm
TYPICAL PERFORMANCE CURVES
SYMBOLS
in permanent damage.
substrate (copper plating).
V
V
V
T
P
CBO
CEO
T
STG
EBO
I
C
T
J
200
100
2.0
1.0
50
20
10
0
0.5
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
TOTAL POWER DISSIPATION vs.
Ceramic Substrate
16 cm x 0.7 mm
Free Air
R
TH (J-A)
Ambient Temperature, T
PARAMETERS
AMBIENT TEMPERATURE
1
2
COLLECTOR CURRENT
312.5 °CW
DC CURRENT GAIN vs.
Collector Current, Ic (mA)
50
5
2
2
100
10
double-sided ceramic
A
V
UNITS
(°C)
CE
mA
°C
°C
W
V
V
V
= 10 V
1
50
150
(T
-65 to +150
RATINGS
A
(T
= 25°C)
100
150
3.0
1.2
20
12
A
= 25°C)
ORDERING INFORMATION
PART NUMBER
NE856M02-T1-AZ
5.0
3.0
2.0
1.0
0.5
0.8
15
10
5
0
COLLECTOR TO BASE VOLTAGE
FEED BACK CAPACITANCE vs.
V
f = 1 GHz
Collector to Base Voltage, V
1
CE
COLLECTOR CURRENT
= 10 V
Collector Current, I
1
INSERTION GAIN vs.
3
QUANTITY
5
3
1000
10
5
C
20 30
(mA)
10
f = 1.0 MHz
CB
(V)
50
20
PACKAGING
Tape & Reel
30
100