ne856m02 California Eastern Laboratories, ne856m02 Datasheet

no-image

ne856m02

Manufacturer Part Number
ne856m02
Description
Npn Epitaxial Silicon Transistor High Frequency Low Distortion Amplifier
Manufacturer
California Eastern Laboratories
Datasheet
1.NE856M02.pdf (8 pages)

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Meier Automation Equipment Co., Limited Meier Automation Equipment Co., Limited
Part Number:
NE856M02
Manufacturer:
NEC
Quantity:
20 000
FEATURES
• HIGH COLLECTOR CURRENT:
• NEW HIGH GAIN POWER MINI-MOLD PACKAGE
• HIGH OUTPUT POWER AT 1 dB COMPRESSION:
• HIGH IP
DESCRIPTION
ELECTRICAL CHARACTERISTICS
Notes:
1. Electronic Industrial Association of Japan.
2. Pulsed measurement, pulse width ≤ 350 µs, duty cycle ≤ 2 %.
3.The emitter terminal should be connected to the ground terminal of the 3 terminal capacitance bridge.
NEC's NE856M02 is an NPN silicon epitaxial bipolar transistor
designed for medium power applications requiring high dy-
namic range and low intermodulation distortion. This device
offers excellent performance and reliability at low cost through
NEC's titanium, platinum, gold metallization system and direct
nitride passivation of the surface of the chip. The NE856M02
is an excellent choice for low noise amplifiers in the VHF to UHF
band and is suitable for CATV and other telecommunication
applications.
SYMBOLS
|S
100 mA MAX
22 dBm TYP at 1 GHz
32 dBm TYP at 1 GHz
(SOT-89 TYPE)
C
h
I
I
NF
NF
CBO
EBO
21E
FE 2
f
RE 3
T
1
2
|
2
3
:
Collector Cutoff Current at V
Emitter Cutoff Current at V
DC Current Gain at V
Gain Bandwidth Product at V
Feed-back Capacitance at V
Insertion Power Gain at V
Noise Figure 1 at V
Noise Figure 2 at V
PARAMETERS AND CONDITIONS
EIAJ
TRANSISTOR HIGH FREQUENCY
1
PACKAGE OUTLINE
REGISTERED NUMBER
PART NUMBER
CE
CE
CE
LOW DISTORTION AMPLIFIER
= 10 V, I
= 10 V, I
= 10 V, I
CE
EB
CB
CB
= 10 V, I
CE
= 1 V, I
C
C
= 10 V, I
= 10 V, I
= 10 V, I
= 7 mA, f = 1 GHz
= 40 mA, f = 1 GHz
C
= 20 mA
NPN EPITAXIAL SILICON
C
C
= 0
= 20 mA, f = 1 GHz
E
(T
E
C
= 0
= 0, f = 1.0 MHz
A
= 20 mA
= 25°C)
UNITS
GHz
µA
µA
pF
dB
dB
dB
OUTLINE DIMENSIONS
PIN CONNECTIONS
E: Emitter
C: Collector
B: Base
0.42
±0.06
California Eastern Laboratories
MIN
50
BOTTOM VIEW
E
PACKAGE OUTLINE M02
1.5
1.6±0.2
4.5±0.1
3.0
C
B
0.45
±0.06
E
NE856M02
2SC5336
M02
TYP
12.0
120
6.5
0.5
1.1
1.8
0.42
±0.06
(Units in mm)
NE856M02
1.5±0.1
0.25±0.02
MAX
250
1.0
1.0
0.8
3.0

Related parts for ne856m02

Image
Part Number
Description
Manufacturer
Datasheet
Request R
UPC2747T
Part Number:
UPC2747T
Description:
Manufacturer:
California Eastern Laboratories
Datasheet:
UPC2747T.pdf (20 pages)
PS2566L-1-V
Part Number:
PS2566L-1-V
Description:
Manufacturer:
California Eastern Laboratories
Datasheet:
PS2566L-1-V.pdf (22 pages)
PS2533L-1-E3
Part Number:
PS2533L-1-E3
Description:
Manufacturer:
California Eastern Laboratories
Datasheet:
PS2533L-1-E3.pdf (18 pages)
PS2501L-1-E4
Part Number:
PS2501L-1-E4
Description:
Manufacturer:
California Eastern Laboratories
PS2841-4B-F3
Part Number:
PS2841-4B-F3
Description:
Manufacturer:
California Eastern Laboratories
Datasheet:
PS2841-4B-F3.pdf (11 pages)
PS2801
Part Number:
PS2801
Description:
Manufacturer:
California Eastern Laboratories
Datasheet:
PS2801.pdf (12 pages)
PS2502L1
Part Number:
PS2502L1
Description:
IC,HIGH ISO. VOLTAGE DARLINGTON TRANSISTOR, MULTI PHOTOCOUPLER,DIP-4-SMD
Manufacturer:
California Eastern Laboratories / NEC
upc8112t
Part Number:
upc8112t
Description:
3 V Silicon Mmic L-band Frequency Down Converter
Manufacturer:
California Eastern Laboratories
Datasheet:
UPC8112T.pdf (4 pages)
upc8163tb-e3
Part Number:
upc8163tb-e3
Description:
3 V Silicon Rfic Frequency Upconverter
Manufacturer:
California Eastern Laboratories
Datasheet:
UPC8163TB-E3.pdf (5 pages)
upg2008tk
Part Number:
upg2008tk
Description:
Necs L,s Band Ultra Small Spdt Gaas Mmic Switch
Manufacturer:
California Eastern Laboratories
Datasheet:
UPG2008TK.pdf (2 pages)
upg174ta
Part Number:
upg174ta
Description:
L-band Pa Driver Amplifier
Manufacturer:
California Eastern Laboratories
Datasheet:
UPG174TA.pdf (2 pages)
upa809t
Part Number:
upa809t
Description:
Npn Silicon High Frequency Transistor
Manufacturer:
California Eastern Laboratories
Datasheet:
UPA809T.pdf (5 pages)
ND487
Part Number:
ND487
Description:
Quad Schottky Diodes
Manufacturer:
California Eastern Laboratories / NEC
Datasheet:
ND487.pdf (1 page)
ND487xx
Part Number:
ND487xx
Description:
Silicon Schottky Varrier Diodes
Manufacturer:
California Eastern Laboratories / NEC
Datasheet:
ND487XX.pdf (1 page)
PS2501-1A
Part Number:
PS2501-1A
Description:
High Isolation Voltage Single Transistor Type Multi Photocoupler Series
Manufacturer:
California Eastern Laboratories / NEC

ne856m02 Summary of contents

Page 1

... NEC's titanium, platinum, gold metallization system and direct nitride passivation of the surface of the chip. The NE856M02 is an excellent choice for low noise amplifiers in the VHF to UHF band and is suitable for CATV and other telecommunication applications ...

Page 2

... Ambient Temperature CURRENT GAIN vs. COLLECTOR CURRENT 200 100 0 Collector Current, Ic (mA) 1 ORDERING INFORMATION (T = 25°C) A UNITS RATINGS PART NUMBER V 20 NE856M02-T1- 3.0 mA 100 W 1.2 150 °C -65 to +150 ° 25°C) A 150 (° QUANTITY ...

Page 3

TYPICAL PERFORMANCE CURVES GAIN BAND WIDTH PRODUCT vs. COLLECTOR CURRENT 0 0 GHz Collector Current, Ic (mA) NOISE FIGURE vs. COLLECTOR CURRENT ...

Page 4

... TYPICAL COMMON EMITTER SCATTERING PARAMETERS GHz GHz - 0.1 GHz - NE856M02 FREQUENCY S 11 (GHz) MAG ANG 0.100 0.626 -67.5 0.200 0.535 -110.6 0.400 0.479 -149.7 0.600 0.465 -168.7 0.800 0.461 178 ...

Page 5

... TYPICAL COMMON EMITTER SCATTERING PARAMETERS GHz 0.1 GHz 3 GHz - 0.1 GHz - NE856M02 FREQUENCY S 11 (GHz) MAG ANG 0.100 0.481 -88.5 0.200 0.434 -130.1 0.400 0.414 -162.4 0.600 0.411 -178.1 0.800 ...

Page 6

... NE856M02 TYPICAL COMMON EMITTER SCATTERING PARAMETERS GHz 0.1 GHz 3 GHz - NE856M02 FREQUENCY S 11 (GHz) MAG ANG 0.100 0.508 -78.9 0.200 0.425 -120.5 0.400 0.384 -156.2 0.600 0.376 -173.7 0.800 0.374 174 ...

Page 7

... TYPICAL COMMON EMITTER SCATTERING PARAMETERS GHz 0.1 GHz - GHz - NE856M02 FREQUENCY S 11 (GHz) MAG ANG 0.100 0.388 -113.0 0.200 0.380 -147.3 0.400 0.377 -172.1 0.600 0.378 175.4 0.800 0.379 166 ...

Page 8

Subject: Compliance with EU Directives CEL certifies, to its knowledge, that semiconductor and laser products detailed below are compliant with the requirements of European Union (EU) Directive 2002/95/EC Restriction on Use of Hazardous Substances in electrical and electronic equipment (RoHS) ...

Related keywords