ne856m02 California Eastern Laboratories, ne856m02 Datasheet - Page 3
ne856m02
Manufacturer Part Number
ne856m02
Description
Npn Epitaxial Silicon Transistor High Frequency Low Distortion Amplifier
Manufacturer
California Eastern Laboratories
Datasheet
1.NE856M02.pdf
(8 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
NE856M02
Manufacturer:
NEC
Quantity:
20 000
TYPICAL PERFORMANCE CURVES
0.5
0.3
10
5
3
2
1
7
6
5
4
3
2
1
0
0.5
GAIN BAND WIDTH PRODUCT vs.
V
f = 1 GHz
1
CE
= 10 V
Collector Current, Ic (mA)
COLLECTOR CURRENT
1
COLLECTOR CURRENT
Collector Current, Ic (mA)
NOISE FIGURE vs.
3
5
5
10
10
20
V
f = 1 GHz
CE
30
= 10 V
50
50
(T
A
= 25°C)
-80
-70
-60
-50
-40
-30
20
10
0
INTERMODULATION DISTORTION vs.
INSERTION GAIN AND MAXIMUM
20
V
Ic = 20 mA
Collector Current, I
CE
GAIN vs. FREQUENCY
COLLECTOR CURRENT
= 10 V
0.2
30
Frequency, f (GHz)
40
at
0.4
{
IM
IM
V
V
Rg = Re 50 Ω
CE
O
3
2
50
= 100 dBµ V/50 Ω
0.6 0.8 1.0 1.4
f = 90 + 100 MHz
f = 2 x 200 - 190 MHz
C
= 10 V
(mA)
60
IM3
IM2
|S
MAG
21E
70
|
2
2.0