hx6228 Mospec Semiconductor Corp., hx6228 Datasheet - Page 12
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hx6228
Manufacturer Part Number
hx6228
Description
128k X 8 Static Ram-soi Hx6228
Manufacturer
Mospec Semiconductor Corp.
Datasheet
1.HX6228.pdf
(12 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
hx6228TVRT
Manufacturer:
TRW/TRC
Quantity:
37
Company:
Part Number:
hx6228TVRT 5962R9853702VXC
Manufacturer:
a
Quantity:
35
HX6228
ORDERING INFORMATION (1)
Honeywell reserves the right to make changes to any products or technology herein to improve reliability, function or design. Honeywell does not assume any liability
arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights nor the rights of others.
H=HONEYWELL
(1) Orders may be faxed to 612-954-2051. For technical assistance, contact our Customer Logistics Department at 612-954-2888.
(2) Engineering Device description: Parameters are tested from -55 to 125°C, 24 hr burn-in, IDDSB = 10mA, no radiation guaranteed.
Contact Factory with other needs.
900156
2/97
Ambient Temperature ≥ 125 °C, F0 ≥ 100 KHz Sq Wave
SOURCE
Frequency of F1 = F0/2, F2 = F0/4, F3 = F0/8, etc.
F17
F16
F13
F14
VDD = 5.6V, R ≤ 10 KΩ, VIH = VDD, VIL = VSS
F7
F6
F5
F4
F3
F2
F8
F1
F1
F1
H
DYNAMIC BURN-IN DIAGRAM*
PROCESS
R
R
R
R
R
R
R
R
R
R
R
R
R
R
X=SOI
10
11
12
13
14
15
16
1
2
3
4
5
6
7
8
9
X
NC
A16
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
DQ0
DQ1
DQ2
VSS
*40-Lead Flat Pack burn-in diagrams have similar connections and are available upon request.
To learn more about Honeywell Solid State Electronics Center,
PART NUMBER
visit our web site at http://www.ssec.honeywell.com
6228
NWE
VDD
NOE
NCS
DQ7
DQ6
DQ5
DQ4
DQ3
A15
A13
A11
A10
CE
A8
A9
PACKAGE DESIGNATION
- =Bare die (No Package)
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
K=Known Good Die
R
R
R
R
R
R
R
R
R
R
R
R
R
R
R
T=32-Lead FP
A=40-Lead FP
VDD
F18
F19
F0
F15
F12
F11
F10
F19
F9
F19
F1
F1
F1
F1
F1
T
E=Engr Device (2)
SCREEN LEVEL
Q=QML Class Q
V=QML Class V
S=Level S
B=Level B
S
STATIC BURN-IN DIAGRAM*
NC
N=No Level Guaranteed
Ambient Temperature ≥ 125 °C
R
R
R
R
R
R
R
R
R
R
R
R
R
R
R=1x10
F=3x10
H=1x10
VDD = 5.5V, R ≤ 10 KΩ
10
11
12
13
14
15
16
1
2
3
4
5
6
7
8
9
TOTAL DOSE
HARDNESS
NC
A16
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
DQ0
DQ1
DQ2
VSS
R
5
5
6
rad(SiO
rad(SiO
rad(SiO
Helping You Control Your World
NWE
NOE
VDD
NCS
DQ7
DQ6
DQ5
DQ4
DQ3
A15
A13
A11
A10
CE
A8
A9
2
2
2
)
)
)
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
R
R
R
R
R
R
R
R
R
R
R
R
R
R
R
BUFFER TYPE
C=CMOS Level
T=TTL Level
VDD
INPUT
C