hyb5117800bsj-70 Infineon Technologies Corporation, hyb5117800bsj-70 Datasheet - Page 9

• Manufacturer Part Number: hyb5117800bsj-70
• Description: 2m X 8-bit Dynamic Ram
• Manufacturer: Infineon Technologies Corporation

AC Characteristics
Parameter
CAS precharge to WE
CAS hold time
RAS to CAS precharge time
Write to RAS precharge time
Write hold time referenced to RAS t
CAS hold time
Write command setup time
Write command hold time
RAS precharge time
CAS hold time
T
Fast Page Mode Read-Modify-Write Cycle
Fast page mode read-write cycle
time
CAS-before-RAS Refresh Cycle
CAS setup time
CAS-before-RAS Counter Test Cycle
CAS precharge time
Test Mode
Self Refresh Cycle
RAS pulse width
Semiconductor Group
A
= 0 to 70 °C,
V
CC
= 5 V
(cont’d)
10 %, t
5)6)
T
Symbol
t
t
t
t
t
t
t
t
t
t
t
t
t
= 5 ns
PRWC
CPWD
CSR
CHR
RPC
WRP
WRH
CPT
CHRT
WTS
WTH
RASS
RPS
CHS
min.
71
48
10
10
5
10
10
35
30
10
10
100k _
95
-50
9
-50
max. min.
–
–
–
–
–
–
–
–
–
–
–
_
_
Limit Values
80
55
10
10
5
10
10
40
30
10
10
100k _
110
-50
HYB 5117800BSJ-50/-60/-70
-60
max. min.
–
–
–
–
–
–
–
–
–
–
–
_
_
95
65
10
10
5
10
10
40
30
10
10
100k _
130
-50
-70
2M x 8-DRAM
max.
–
–
–
–
–
–
–
–
–
–
–
_
_
Unit Note
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
17
17
17
16F