hyb5117800bsj-70 Infineon Technologies Corporation, hyb5117800bsj-70 Datasheet - Page 2

• Manufacturer Part Number: hyb5117800bsj-70
• Description: 2m X 8-bit Dynamic Ram
• Manufacturer: Infineon Technologies Corporation

A0 to A10
A0 to A9
RAS
OE
I/O1-I/O8
CAS
WE
N.C.
The HYB 5117800BSJ is a 16 MBit dynamic RAM organized as 2097152 words by 8-bits. The HYB
5117800BSJ utilizes a submicron CMOS silicon gate process technology, as well as advanced
circuit techniques to provide wide operating margins, both internally and for the system user.
Multiplexed address inputs permit the HYB 5117800BSJ to be packaged in a standard SOJ 28
400 mil plastic package. These packages provide high system bit densities and are compatible with
commonly used automatic testing and insertion equipment. System-oriented features include single
+ 5 V ( 10 %) power supply, direct interfacing with high-performance logic device families such as
Schottky TTL.
Ordering Information
Type
HYB 5117800BSJ-50
HYB 5117800BSJ-60
HYB 5117800BSJ-70
Pin Names
V
V
Semiconductor Group
CC
SS
Row Address Inputs
Column Address Inputs
Row Address Strobe
Output Enable
Column Address Strobe
Read/Write Input
Power Supply (+ 5 V)
Ground (0 V)
not connected
Data Input/Output
Ordering Code
Q67100-Q1092
Q67100-Q1093
Q67100-Q1094
Package
P-SOJ-28-3
P-SOJ-28-3
P-SOJ-28-3
2
400 mil
400 mil
400 mil
HYB 5117800BSJ-50/-60/-70
DRAM (access time 50 ns)
DRAM (access time 60 ns)
DRAM (access time 70 ns)
Descriptions
2M x 8-DRAM