hyb5117800bsj-70 Infineon Technologies Corporation, hyb5117800bsj-70 Datasheet - Page 6

• Manufacturer Part Number: hyb5117800bsj-70
• Description: 2m X 8-bit Dynamic Ram
• Manufacturer: Infineon Technologies Corporation

DC Characteristics
Parameter
during fast page mode:
(RAS =
before-RAS refresh mode: -50 ns version
(RAS, CAS cycling, t
Capacitance
Parameter
Input capacitance (A0 to A10)
Input capacitance (RAS, CAS, WE, OE)
I/O capacitance (I/O1-I/O8)
T
Average
Standby
(RAS = CAS =
Average
Average Self Refresh Current
(CBR cycle with tRAS>TRASSmin., CAS held low,
WE=Vcc-0.2V, Address and Din=Vcc-0.2V or 0.2V)
T
Semiconductor Group
A
A
= 0 to 70 °C,
= 0 to 70 °C,
V
V
V
V
IL
CC
, CAS, address cycling,t
CC
CC
supply current,
supply current
supply current, during CAS-
V
V
V
CC
CC
SS
– 0.2 V)
= 5 V
= 0 V,
(cont’d)
RC
= t
V
RC
10 %,
CC
-60 ns version
-70 ns version
-60 ns version
-70 ns version
-50 ns version
min
= 5 V
.)
f
PC
= 1 MHz
= t
10 %, t
PC
min.
T
)
= 5 ns
Symbol
I
I
I
I
6
CC4
CC5
CC6
CC7
Symbol
C
C
C
I1
I2
IO
min.
–
–
–
–
–
–
–
_
HYB 5117800BSJ-50/-60/-70
Limit Values
min.
–
–
–
Limit Values
max.
40
35
30
1
120
110
100
1
max.
5
7
7
2M x 8-DRAM
Unit Test
mA
mA
mA
mA
mA
mA
mA
mA
Condition
2) 3) 4)
2) 3) 4)
2) 3) 4)
1)
2) 4)
2) 4)
2) 4)
Unit
pF
pF
pF