hyb5117800bsj-70 Infineon Technologies Corporation, hyb5117800bsj-70 Datasheet - Page 8

• Manufacturer Part Number: hyb5117800bsj-70
• Description: 2m X 8-bit Dynamic Ram
• Manufacturer: Infineon Technologies Corporation

AC Characteristics
Parameter
Data to OE low delay
CAS high to data delay
OE high to data delay
Write command pulse width
Write command setup time
Write command to RAS lead time t
Write command to CAS lead time t
Data setup time
Data hold time
Data to CAS low delay
RAS to WE delay time
CAS to WE delay time
Column address to WE delay time t
OE command hold time
CAS precharge time
Access time from CAS precharge t
RAS pulse width
CAS precharge to RAS Delay
T
Output buffer turn-off delay from
OE
Write Cycle
Write command hold time
Read-Modify-Write Cycle
Read-write cycle time
Fast Page Mode Cycle
Fast page mode cycle time
Semiconductor Group
A
= 0 to 70 °C,
V
CC
= 5 V
(cont’d)
10 %, t
5)6)
T
Symbol
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
= 5 ns
OEZ
DZO
CDD
ODD
WCH
WP
WCS
RWL
CWL
DS
DH
DZC
RWC
RWD
CWD
AWD
OEH
PC
CP
CPA
RAS
RHPC
min.
0
0
13
13
8
8
0
13
13
0
10
0
126
68
31
43
13
35
10
–
50
30
8
-50
max. min.
13
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
30
200k 60
–
Limit Values
0
0
15
15
10
10
0
15
15
0
10
0
150
80
35
50
15
40
10
–
35
HYB 5117800BSJ-50/-60/-70
-60
max. min.
15
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
35
200k 70
–
0
0
20
20
10
10
0
20
20
0
15
0
180
95
45
60
20
45
10
–
40
-70
2M x 8-DRAM
max.
20
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
40
200k ns
–
Unit Note
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
13
14
15
16
13
12
14
16
15
15
15
7
16F