mt9jsf12872pz Micron Semiconductor Products, mt9jsf12872pz Datasheet - Page 4
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mt9jsf12872pz
Manufacturer Part Number
mt9jsf12872pz
Description
Ddr3 Sdram Rdimm
Manufacturer
Micron Semiconductor Products
Datasheet
1.MT9JSF12872PZ.pdf
(25 pages)
Table 6: Pin Descriptions
PDF: 09005aef83b4fcd7
jsf9c128_256x72pz.pdf – Rev. A 07/09
TDQS#[17:9])
(TDQS[17:9]
RAS#, CAS#,
CK0, CK0#
DQS#[8:0]
ODT[1:0]
DQ[63:0]
DQS[8:0]
Symbol
CKE[1:0]
DM[8:0]
BA[2:0]
A[15:0]
RESET#
SA[2:0]
CB[7:0]
S#[1:0]
Par_In
WE#
SCL
(LVCMOS)
Type
Input
Input
Input
Input
Input
Input
Input
Input
Input
Input
Input
Input
I/O
I/O
I/O
Description
Address inputs: Provide the row address for ACTIVATE commands, and the column ad-
dress and auto precharge bit (A10) for READ/WRITE commands, to select one location out
of the memory array in the respective bank. A10 is sampled during a PRECHARGE com-
mand to determine whether the PRECHARGE applies to one bank (A10 LOW, bank selec-
ted by BA[2:0]) or all banks (A10 HIGH). If only one bank is to be precharged, the bank is
selected by BA. A12 is also used for BC4/BL8 identification as “BL on-the-fly” during CAS
commands. The address inputs also provide the op-code during the mode register com-
mand set. A[13:0] address the 1Gb DDR3 devices. A[14:0] address the 2Gb DDR3 devices.
A15 is needed to calculate parity on the command/address bus.
Bank address inputs: BA[2:0] define the device bank to which an ACTIVATE, READ,
WRITE, or PRECHARGE command is being applied. BA[2:0] define which mode register
(MR0, MR1, MR2, and MR3) is loaded during the LOAD MODE command. BA[1:0] are used
as part of the parity calculation.
Clock: CK and CK# are differential clock inputs. All control, command, and address input
signals are sampled on the crossing of the positive edge of CK and the negative edge of CK#.
Clock enable: CKE enables (registered HIGH) and disables (registered LOW) internal circui-
try and clocks on the DRAM.
Input data mask: DM is an input mask signal for write data. Input data is masked when
DM is sampled HIGH, along with the input data, during a write access. DM is sampled on
both edges of the DQS. Although the DM pins are input-only, the DM loading is designed
to match that of the DQ and DQS pins. When TDQS is enabled, DM is disabled and TDQS
and TDQS# provide termination resistance; otherwise, the TDQS# pins are no function.
On-die termination: ODT enables (registered HIGH) and disables (registered LOW) termi-
nation resistance internal to the DRAM. When enabled in normal operation, ODT is only
applied to the following pins: DQ, DQS, DQS#, and DM. The ODT input will be ignored if
disabled via the LOAD MODE command.
Parity input: Parity bit for the address, RAS#, CAS#, and WE#.
Command inputs: RAS#, CAS#, and WE# (along with S#) define the command being en-
tered.
Reset: RESET# is an active LOW CMOS input referenced to V
a CMOS input defined as a rail-to-rail signal with DC HIGH ≥ 0.8 × V
V
Chip select: S# enables (registered LOW) and disables (registered HIGH) the command de-
coder.
Serial address inputs: These pins are used to configure the temperature sensor/SPD EE-
PROM address range on the I
Serial clock for temperature sensor/SPD EEPROM: SCL is used to synchronize communi-
cation to and from the temperature sensor/SPD EEPROM.
Check bits: Data used for ECC.
Data input/output: Bidirectional data bus.
Data strobe: DQS and DQS# are differential data strobes. Output with read data. Edge-
aligned with read data. Input with write data. Center-aligned with write data.
DD
. RESET# assertion and deassertion are asynchronous.
1GB, 2GB (x72, ECC, SR) 240-Pin Halogen-Free DDR3 RDIMM
2
4
C bus.
Micron Technology, Inc. reserves the right to change products or specifications without notice.
Pin Assignments and Descriptions
SS
. The RESET# input receiver is
©2009 Micron Technology, Inc. All rights reserved.
DD
and DC LOW ≤ 0.2 ×