hys64t128021hdl-3-b Infineon Technologies Corporation, hys64t128021hdl-3-b Datasheet - Page 28

• Manufacturer Part Number: hys64t128021hdl-3-b
• Description: 200-pin So-dimm Ddr2 Sdram Modules
• Manufacturer: Infineon Technologies Corporation

Table 19
Parameter
Operating Current
urst Write: All banks open; Continuous burst writes; BL = 4; AL = 0, CL = CL
t
SWITCHING; Data Bus inputs are SWITCHING;
Burst Refresh Current
t
commands, Other control and address inputs are SWITCHING, Data bus inputs are SWITCHING.
Distributed Refresh Current
t
commands, Other control and address inputs are SWITCHING, Data bus inputs are SWITCHING.
Data Sheet
RAS
CK
CK
=
=
=
t
t
CK.MIN
CK.MIN.
t
RAS.MAX.
., Refresh command every
, Refresh command every
I
DD
,
t
RP
Measurement Conditions (cont’d)
=
t
RP.MAX
; CKE is HIGH, CS is HIGH between valid commands. Address inputs are
t
t
RFC
RFC
=
=
t
t
REFI
RFC.MIN
interval, CKE is LOW and CS is HIGH between valid
interval, CKE is HIGH, CS is HIGH between valid
1)2)3)4)5)6)
28
HYS64T[32/64/128]xxxHDL-[2.5/…/5]-B
SO-DIMM DDR2 SDRAM Module
MIN
;
t
CK
=
Electrical Characteristics
t
CK.MIN
05122005-2TKP-OM7N
;
Rev 1.00, 2005-06
Symbol
I
I
I
DD4W
DD5B
DD5D