mt16jtf25664ay-1g1 Micron Semiconductor Products, mt16jtf25664ay-1g1 Datasheet
mt16jtf25664ay-1g1
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mt16jtf25664ay-1g1 Summary of contents
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... DDR3 SDRAM UDIMM MT16JTF25664AY – 2GB MT16JTF51264AY – 4GB For component data sheets, refer to Micron’s Web site: Features • DDR3 functionality and operations supported as per component data sheet • 240-pin, unbuffered dual in-line memory module (UDIMM) • Fast data transfer rates: PC3-10600, PC3-8500, or PC3-6400 • ...
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... Parameter Refresh count Row address Device bank address Device page size per bank Device configuration Column address Module rank address Table 3: Part Numbers and Timing Parameters 2GB Modules Base device: MT41J128M8 Module 2 Part Number Density MT16JTF25664A(I)Y-1G4__ MT16JTF25664A(I)Y-1G3__ MT16JTF25664A(I)Y-1G1__ ...
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Pin Assignments and Descriptions Table 5: Pin Assignments 240-Pin UDIMM Front Pin Symbol Pin Symbol Pin Symbol Pin Symbol Pin Symbol Pin Symbol Pin Symbol Pin Symbol DQ25 61 REF ...
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... DQS0#–DQS7# Edge-aligned with read data, center-aligned with write data. SDA I/O Serial presence-detect data: SDA is a bidirectional pin used to transfer addresses and data into and out of the SPD EEPROM on the module. V Supply Power supply: 1.5V ±0.075V Supply Serial EEPROM positive power supply: +3.0V to +3.6V. ...
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Functional Block Diagram Figure 2: Functional Block Diagram S1# S0# DQS0# DQS0 DM0 DM DQ0 DQ DQ1 DQ DQ2 DQ DQ3 DQ DQ4 DQ DQ5 DQ DQ6 DQ DQ7 DQS1# DQS1 DM1 DM DQ8 DQ DQ9 ...
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... General Description The MT16JTF25664AY and MT16JTF51264AY DDR3 SDRAM modules are high-speed, CMOS, dynamic random-access 2GB and 4GB memory modules organized in a x64 configuration. These DDR3 SDRAM modules use internally configured 8-bank (1Gb and 2Gb) DDR3 SDRAM devices. DDR3 SDRAM modules use double data rate architecture to achieve high-speed opera- tion ...
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... Electrical Specifications Stresses greater than those listed in Table 7, may cause permanent damage to the module. This is a stress rating only, and functional operation of the module at these or any other conditions outside those indicated in the device data sheet is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reli- ability ...
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... Table 9: Module and Component Speed Grades DDR3 components must be able to meet or exceed the listed speed grade. Module Speed Grade -1G4 -1G3 -1G1 -1G0 -80C -80B PDF: 09005aef82b22503/Source: 09005aef82b224f4 JTF16C_256_512x64AY.fm - Rev. A 7/07 EN 2GB, 4GB (x64, DR) 240-Pin DDR3 SDRAM UDIMM Component Speed Grade Micron Technology, Inc ...
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I Specifications DD Table 10: DDR3 I Specifications and Conditions – 2GB DD Values shown for each data rate are for the MT41J128M8 DDR3 SDRAM only and are computed from values specified in the 1Gb (128 Meg x 8) component ...
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Serial Presence-Detect Table 12: Serial Presence-Detect EEPROM DC Operating Conditions All voltages referenced to V Parameter/Condition Supply voltage Input high voltage: Logic 1; All inputs Input low voltage: Logic 0; All inputs Output low voltage 3mA OUT Input ...
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... Module type (form factor) 4 SDRAM device density and internal banks 5 SDRAM device addressing (row and column counts) 6 Reserved 7 Module organization (module ranks, SDRAM device width) 8 Module memory bus width 9 Fine time base (FTB) dividend/divisor 10 Medium time base (MTB) dividend 11 Medium time base (MTB) divisor ...
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... Module manufacturing date 122–125 Module serial number 126, 127 CRC (cyclic redundancy check) 128–145 Module part number (ASCII) 146 Module revision code, SDRAM device die revision 147 Module revision code, PCB revision 148 DRAM device manufacturer ID (continuation code) 149 DRAM device manufacturer ID (manufacturer’ ...
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... BACK VIEW U12 U13 U14 U15 U16 5.0 (0.197) TYP 71.0 (2.79) 47.0 (1.85) TYP TYP ® their respective owners. Micron Technology, Inc., reserves the right to change products or specifications without notice. 13 Module Dimensions 4.0 (0.157) MAX U8 30.50 (1.20) 29.85 (1.175) 17.3 (0.68) TYP 1.37 (0.054) 1.17 (0.046) 9.5 (0.374) TYP PIN 120 U17 3.0 (0.118) x4 TYP PIN 121 © ...