mt16vddf6464ay-40b Micron Semiconductor Products, mt16vddf6464ay-40b Datasheet

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mt16vddf6464ay-40b

Manufacturer Part Number
mt16vddf6464ay-40b
Description
512mb, 1gb X64, Dr 184-pin Ddr Sdram Udimm
Manufacturer
Micron Semiconductor Products
Datasheet
DDR SDRAM UDIMM
MT16VDDF6464A – 512MB
MT16VDDF12864A – 1GB
For component data sheets, refer to Micron’s Web site:
Features
• 184-pin, unbuffered dual in-line memory module
• Fast data transfer rates: PC2100, PC2700,
• 512MB (64 Meg x 64) and 1GB (128 Meg x 64)
• V
• V
• 2.5V I/O (SSTL_2-compatible)
• Internal, pipelined double data rate (DDR)
• Bidirectional data strobe (DQS) transmitted/
• Differential clock inputs (CK and CK#)
• Multiple internal device banks for concurrent
• Dual rank
• Selectable burst lengths (BL) 2, 4, or 8
• Auto precharge option
• Auto refresh and self refresh modes: 7.8125µs
• Serial presence-detect (SPD) with EEPROM
• Selectable CAS latency (CL) for maximum
• Gold edge contacts
Table 1:
PDF: 09005aef82c34cfe/Source: 09005aef82c34cc5
DDF16C64_128x64A.fm - Rev. B 11/07 EN
(UDIMM)
or PC3200
(-40B: V
2n-prefetch architecture
received with data—that is, source-synchronous
data capture
operation
maximum average periodic refresh interval
compatibility
Speed
Grade
DD
DDSPD
-40B
-335
-265
= V
DD
DD
= +2.3V to +3.6V
Q = +2.5V
= V
Key Timing Parameters
Products and specifications discussed herein are subject to change by Micron without notice.
Nomenclature
DD
Notes:
Industry
Q = +2.6V)
PC3200
PC2700
PC2100
1. The values of
actual DDR SDRAM device specifications are 15ns.
CL = 3
400
1
1
t
Data Rate (MT/s)
RCD and
CL = 2.5
512MB, 1GB (x64, DR) 184-Pin DDR SDRAM UDIMM
333
333
266
t
www.micron.com
RP for -335 modules show 18ns to align with industry specifications;
1
Figure 1:
Notes: 1. Not recommended for new designs.
Options
• Operating temperature
• Package
• Memory clock, speed, CAS latency
CL = 2
PCB height: 25.4mm (1.0in)
266
266
200
– Commercial (0°C ≤ T
– Industrial (–40°C ≤ T
– 184-pin DIMM (standard)
– 184-pin DIMM (Pb-free)
– 5.0ns (200 MHz), 400 MT/s, CL = 3
– 6.0ns (167 MHz), 333 MT/s, CL = 2.5
– 7.5ns (133 MHz), 266 MT/s, CL = 2.5
Micron Technology, Inc., reserves the right to change products or specifications without notice.
2. Contact Micron for industrial temperature
module offerings.
t
184-Pin UDIMM (MO-206)
(ns)
RCD
15
18
20
A
A
2
(ns)
t
≤ +85°C)
15
18
20
≤ +70°C)
RP
©2007 Micron Technology, Inc. All rights reserved.
(ns)
t
55
60
65
RC
1
Marking
Features
None
-40B
-335
-265
Notes
G
Y
I
1

Related parts for mt16vddf6464ay-40b

mt16vddf6464ay-40b Summary of contents

Page 1

... RCD and RP for -335 modules show 18ns to align with industry specifications; Micron Technology, Inc., reserves the right to change products or specifications without notice. 1 184-Pin UDIMM (MO-206) 2 ≤ +70°C) A ≤ +85° module offerings. ...

Page 2

... Column address Module rank address Table 3: Part Numbers and Timing Parameters – 512MB Modules Base device: MT46V32M8, Module 2 Part Number Density MT16VDDF6464AG-40B__ 512MB MT16VDDF6464AY-40B__ 512MB MT16VDDF6464AY-335__ 512MB MT16VDDF6464AY-265__ 512MB Table 4: Part Numbers and Timing Parameters – 1GB Modules Base device: MT46V64M8, Module 2 ...

Page 3

Pin Assignments and Descriptions Table 5: Pin Assignments 184-Pin DDR UDIMM Front Pin Symbol Pin Symbol Pin Symbol Pin Symbol DQ17 47 REF 2 DQ0 25 DQS2 DQ1 ...

Page 4

... Data strobe: Output with read data, input with write data. DQS is edge- aligned with read data, center-aligned with write data. Used to capture data. I/O Serial presence-detect data: SDA is a bidirectional pin used to transfer addresses and data into and out of the presence-detect portion of the module. Supply Power supply: +2.5V ±0.2V (-40B: +2.6V ±0.1V). Supply Serial EEPROM positive power supply: +2 ...

Page 5

Functional Block Diagram Figure 2: Functional Block Diagram S1# S0# DQS0 DM0 DQ0 DQ1 DQ2 DQ3 DQ4 DQ5 DQ6 DQ7 DQS1 DM1 DQ8 DQ9 DQ10 DQ11 DQ12 DQ13 DQ14 DQ15 DQS2 DM2 DQ16 DQ17 DQ18 DQ19 DQ20 DQ21 DQ22 DQ23 ...

Page 6

... DDR SDRAM modules incorporate serial presence-detect (SPD). The SPD function is implemented using a 2,048-bit EEPROM. This nonvolatile storage device contains 256 bytes. The first 128 bytes are programmed by Micron to identify the module type and various SDRAM organizations and timing parameters. The remaining 128 bytes of storage are available for use by the customer ...

Page 7

... Electrical Specifications Stresses greater than those listed in Table 7 may cause permanent damage to the module. This is a stress rating only, and functional operation of the module at these or any other conditions outside those indicated on the device data sheet is not implied. Exposure to absolute maximum rating conditions for extended periods may adversely affect reliability ...

Page 8

... READ or WRITE commands Notes: 1. Value calculated as one module rank in this operating condition; all other module ranks are Value calculated reflects all module ranks in this operating condition. PDF: 09005aef82c34cfe/Source: 09005aef82c34cc5 DDF16C64_128x64A ...

Page 9

... Address and control inputs change only during active READ or WRITE commands Notes: 1. Value calculated as one module rank in this operating condition; all other module ranks are Value calculated reflects all module ranks in this operating condition. PDF: 09005aef82c34cfe/Source: 09005aef82c34cc5 DDF16C64_128x64A ...

Page 10

Serial Presence-Detect Table 11: Serial Presence-Detect EEPROM DC Operating Conditions Parameter/Condition Supply voltage Input high voltage: Logic 1; All inputs Input low voltage: Logic 0; All inputs Output low voltage 3mA OUT Input leakage current GND ...

Page 11

... 0.9 (0.035) R 1.02 (0.04) TYP TYP TYP 120.65 (4.75) TYP Back view U12 U13 U14 6.35 (0.25) TYP tive owners. 11 Module Dimensions U19 17.78 (0.07) TYP Pin 92 U15 U16 U17 10.0 (0.394) TYP Pin 93 64.77 (2.55) TYP Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2007 Micron Technology, Inc. All rights reserved. ...

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