mt18d836m-5-20x Micron Semiconductor Products, mt18d836m-5-20x Datasheet - Page 7

• Manufacturer Part Number: mt18d836m-5-20x
• Description: Ecc-optimized Dram Simms
• Manufacturer: Micron Semiconductor Products

NOT RECOMMENDED FOR NEW DESIGNS
4, 8 Meg x 36 ECC-Optimized DRAM SIMMs
DM65_2.p65 – Rev. 9/98
AC ELECTRICAL CHARACTERISTICS
(Notes: 5, 6, 7, 8, 9, 10, 11, 12) (V
AC CHARACTERISTICS
PARAMETER
RAS# precharge time
RAS# to CAS# precharge time
READ command hold time (referenced to RAS#)
RAS# hold time
WRITE command to RAS# lead time
Transition time (rise or fall)
WRITE command hold time
WRITE command hold time (referenced to RAS#)
WE# command setup time
Output disable delay from WE# (CAS# HIGH)
WRITE command pulse width
WE# pulse width for output disable when CAS# HIGH
WE# hold time (CBR Refresh)
WE# setup time (CBR Refresh)
DD
= +5V ±10%)
SYMBOL
t
t
t
t
t
t
t
t
t
t
t
WCH
WCR
WHZ
WRH
RWL
WCS
t
WPZ
WRP
RRH
t
RSH
RPC
WP
RP
t
T
7
MIN
30
13
13
38
10
5
0
2
8
0
0
5
8
8
ECC-OPTIMIZED DRAM SIMMs
Micron Technology, Inc., reserves the right to change products or specifications without notice.
-5
MAX
50
12
MIN
40
15
15
10
45
10
10
10
5
0
2
0
0
5
-6
MAX
4, 8 MEG x 36
50
15
UNITS
©1998, Micron Technology, Inc.
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
NOTES
16