mt18ld472fg-5 Micron Semiconductor Products, mt18ld472fg-5 Datasheet - Page 11

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mt18ld472fg-5

Manufacturer Part Number
mt18ld472fg-5
Description
2, 4 Meg X 72 Buffered Dram Dimms
Manufacturer
Micron Semiconductor Products
Datasheet
OBSOLETE
EDO PAGE MODE
AC ELECTRICAL CHARACTERISTICS
(Notes: 5, 6, 7, 8, 9, 12, 35) (V
2, 4 Meg x 72 Buffered DRAM DIMMs
DM33.p65 – Rev. 2/99
AC CHARACTERISTICS - EDO PAGE MODE OPTION
PARAMETER
Access time from column address
Column-address setup to CAS# precharge
Column-address hold time (referenced to RAS#)
Column-address setup time
Row-address setup time
Column address to WE# delay time
Access time from CAS#
Column-address hold time
CAS# pulse width
CAS# hold time (CBR Refresh)
CAS# to output in Low-Z
Data output hold after next CAS# LOW
CAS# precharge time
Access time from CAS# precharge
CAS# to RAS# precharge time
CAS# hold time
CAS# setup time (CBR Refresh)
CAS# to WE# delay time
WRITE command to CAS# lead time
Data-in hold time
Data-in setup time
Output disable
Output enable
OE# hold time from WE# during
READ-MODIFY-WRITE cycle
OE# HIGH hold from CAS# HIGH
OE# HIGH pulse width
OE# LOW to CAS# HIGH setup time
Output buffer turn-off delay
DD
= +3.3V ±0.3V)
SYMBOL
t
t
t
t
t
t
t
t
OEHC
t
t
t
t
t
AWD
t
t
t
t
t
t
t
t
CWD
COH
CWL
t
ACH
CAH
t
t
t
OEH
t
ASC
ASR
CAC
CAS
CHR
CPA
CSH
t
OEP
OES
OFF
CLZ
t
CRP
CSR
AA
DH
OD
AR
DS
OE
CP
11
MIN
12
36
44
13
10
36
30
13
-2
2
5
8
6
2
5
8
7
8
0
6
5
5
4
2
-5
10,000
MAX
Micron Technology, Inc., reserves the right to change products or specifications without notice.
30
18
33
12
12
17
BUFFERED DRAM DIMMs
MIN
15
43
51
15
10
10
10
43
37
10
15
10
-2
2
5
8
2
5
7
0
8
5
5
2
-6
10,000
MAX
35
20
40
15
15
20
2, 4 MEG x 72
UNITS
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
©1999, Micron Technology, Inc.
19, 25, 33
NOTES
21, 28
14, 23
21, 28
23, 27
22, 27
22, 26
4, 22
4, 21
23
22
21
23
21
21
15
23
23
22
26
23

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