mt18ld472fg-5 Micron Semiconductor Products, mt18ld472fg-5 Datasheet
mt18ld472fg-5
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mt18ld472fg-5 Summary of contents
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... NOTE: Pin symbols in parentheses are not used on these modules but may be used for other modules in this product family. They are for reference only Meg x 72 Buffered DRAM DIMMs DM33.p65 – Rev. 2/99 MT9LD272(X), MT18LD472(F)(X) For the latest data sheet, please refer to the Micron Web ...
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... OBSOLETE PART NUMBERS EDO Operating Mode PART NUMBER CONFIGURATION REFRESH MT9LD272G Meg x 72 ECC MT18LD472G Meg x 72 ECC MT18LD472FG Meg x 72 ECC x = speed FPM Operating Mode PART NUMBER CONFIGURATION REFRESH MT9LD272G-x 2 Meg x 72 ECC MT18LD472G-x 4 Meg x 72 ECC ...
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OBSOLETE DQ0-DQ7 DQ0-DQ7 WE# WE0 OE0# OE# D RAS# RAS0# CAS# A1ÐA10 CAS0 A10 A10- DQ40-DQ47 DQ0-DQ7 WE# WE2 OE2# OE# D RAS2# RAS# A1ÐA10 ...
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... RAS# RAS# A1ÐA11 A1ÐA11 CAS# CAS# CAS# MT18LD472FG (4K REFRESH) U1-U18 = MT4LC4M4A1 FAST PAGE MODE MT18LD472FG X (4K REFRESH) U1-U18 = MT4LC4M4E9 EDO PAGE MODE U1-U18, Buffers U1-U18, Buffers Micron Technology, Inc., reserves the right to change products or specifications without notice. DQ32-DQ35 DQ0-DQ3 DQ0-DQ3 A0 WE# ...
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OBSOLETE PIN DESCRIPTIONS PIN NUMBERS SYMBOL 30, 45 RAS0#, RAS2# 28, 46 CAS0#, CAS4# 27, 48 WE0#, WE2# 31, 44 OE0#, OE2# 33-38, 117-122, 126 A0-A11, B0 2-5, 7-11, 13-17, 19-22, DQ0-DQ71 52-53, 55-58, 60, 65-67, 69-72, 74-77, 86-89, 91-95, ...
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... OBSOLETE PRESENCE-DETECT TRUTH TABLE CHARACTERISTICS Module Module Density Configuration 0MB No module installed 8MB 1 Meg x 64/72 8MB 1 Meg x 64/72 16MB 2 Meg x 64/72 • 16MB 2 Meg x 64/72 32MB 4 Meg x 64/72 • 32MB 4 Meg x 64/72 64MB 8 Meg x 64/72 Page Mode Access Timing Refresh Control Data Width NOTE Ground This addressing includes a redundant address to allow mixing of 12/10 and 11/11 DRAMs with the same presence-detect setting ...
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OBSOLETE ABSOLUTE MAXIMUM RATINGS* Voltage on V Pin Relative Voltage on Inputs or I/O Pins Relative to V ..................................... -1V to +4.6V SS Operating Temperature, T (ambient) .. 0°C to +70°C A Storage Temperature (plastic) ........... -55°C ...
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OBSOLETE 2,048-CYCLE REFRESH I CC (Notes +3.3V ±0.3V) DD PARAMETER/CONDITION STANDBY CURRENT: TTL (RAS# = CAS STANDBY CURRENT: CMOS (RAS# = CAS 0.2V) DD OPERATING CURRENT: Random READ/WRITE ...
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OBSOLETE CAPACITANCE PARAMETER Input Capacitance: A0-A11, B0, PDE#, OE0#, OE2# Input Capacitance: WE0#, WE2#, CAS0#, CAS4# Input Capacitance: RAS0#, RAS2# Input/Output Capacitance: DQ0-DQ71 Output Capacitance: PD1-PD8 FAST PAGE MODE AC ELECTRICAL CHARACTERISTICS (Notes 12, 35) ...
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OBSOLETE FAST PAGE MODE AC ELECTRICAL CHARACTERISTICS (Notes 12, 35 CHARACTERISTICS - FAST PAGE MODE OPTION PARAMETER PDE# to valid presence-detect data PDE# inactive to presence-detects inactive FAST-PAGE-MODE READ-WRITE cycle time Access ...
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OBSOLETE EDO PAGE MODE AC ELECTRICAL CHARACTERISTICS (Notes 12, 35 CHARACTERISTICS - EDO PAGE MODE OPTION PARAMETER Access time from column address Column-address setup to CAS# precharge Column-address hold time (referenced to ...
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OBSOLETE EDO PAGE MODE AC ELECTRICAL CHARACTERISTICS (Notes 12, 35 CHARACTERISTICS - EDO PAGE MODE OPTION PARAMETER OE# setup prior to RAS# during HIDDEN REFRESH cycle EDO-PAGE-MODE READ or WRITE cycle time ...
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... HIGH. 21.A +2ns timing skew from the DRAM to the module resulted from the addition of line drivers. 22.A -2ns timing skew from the DRAM to the module resulted from the addition of line drivers. 23.A +5ns timing skew from the DRAM to the module resulted from the addition of line drivers. ...
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OBSOLETE NOTES (continued) t 31. PDOFF MAX is determined by the pull-up resistor value. Care must be taken to ensure adequate recovery time prior to reading valid up-level on subsequent DIMM position. 32.Measured with specified current load and 100pF. t ...
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OBSOLETE V IH RAS CRP V CAS ASR V IH ROW ADDR WE OE FAST PAGE MODE AND ...
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OBSOLETE V IH RAS CRP CAS ASR V IH ADDR ROW IOH DQ V IOL FAST PAGE MODE AND ...
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OBSOLETE V IH RAS CRP V IH CAS ASR V IH ROW ADDR IOH DQ V IOL FAST PAGE MODE TIMING ...
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OBSOLETE V IH RAS CSH t CRP V CAS RAD t ASR t RAH V IH ADDR V ROW OPEN ...
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OBSOLETE FAST/EDO-PAGE-MODE EARLY WRITE CYCLE V IH RAS CSH t CRP V IH CAS RAD t ASR t RAH V IH ADDR ROW WCS ...
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OBSOLETE (LATE WRITE and READ-MODIFY-WRITE cycles RAS CRP V IH CAS ASR V IH ADDR WE IOH DQ V IOL ...
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OBSOLETE FAST/EDO-PAGE-MODE READ-WRITE CYCLE (LATE WRITE and READ-MODIFY-WRITE cycles RAS CRP V IH CAS RAD t ASR t RAH V IH ADDR ROW WE ...
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OBSOLETE EDO-PAGE-MODE READ EARLY WRITE CYCLE V IH RAS CRP t RCD V IH CAS RAD t ASR t RAH V IH ADDR ROW WE IOH DQ ...
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OBSOLETE FAST-PAGE-MODE READ EARLY WRITE CYCLE V IH RAS CRP V IH CAS ASR V IH ADDR V ROW WE FAST PAGE MODE TIMING ...
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OBSOLETE V IH RAS CRP V CAS ASR V IH ADDR WE OE EDO PAGE MODE TIMING PARAMETERS ...
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OBSOLETE V IH RAS CRP V IH CAS ASR V IH ADDR WE FAST PAGE MODE AND EDO PAGE MODE TIMING PARAMETERS -5* ...
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OBSOLETE RAS RPC CSR V IH CAS WE PDE PD1-PD8 V IL FAST ...
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OBSOLETE V IH RAS CRP V IH CAS ASR t RAH V IH ADDR ROW IOH DQ V IOL FAST PAGE MODE AND EDO PAGE MODE TIMING PARAMETERS -5* SYMBOL MIN ...
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OBSOLETE .079 (2.00) R (2X) .118 (3.00) (2X) .118 (3.00) TYP .250 (6.35) TYP .118 (3.00) TYP 2.625 (66.68) PIN 1 (PIN 85 on backside) .079 (2.00) R (2X) .118 (3.00) (2X) .118 (3.00) TYP .250 (6.35) TYP PIN 1 ...
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OBSOLETE 8000 S. Federal Way, P.O. Box 6, Boise, ID 83707-0006, Tel: 208-368-3900 E-mail: prodmktg@micronsemi.com, Internet: http://www.micronsemi.com, Customer Comment Line: 800-932-4992 Micron is a registered trademark of Micron Technology, Inc Meg x 72 Buffered DRAM DIMMs DM33.p65 – ...