mt18ld472fg-5 Micron Semiconductor Products, mt18ld472fg-5 Datasheet - Page 10

• Manufacturer Part Number: mt18ld472fg-5
• Description: 2, 4 Meg X 72 Buffered Dram Dimms
• Manufacturer: Micron Semiconductor Products

OBSOLETE
FAST PAGE MODE
AC ELECTRICAL CHARACTERISTICS
(Notes: 5, 6, 7, 8, 9, 12, 35) (V
2, 4 Meg x 72 Buffered DRAM DIMMs
DM33.p65 – Rev. 2/99
AC CHARACTERISTICS - FAST PAGE MODE OPTION
PARAMETER
PDE# to valid presence-detect data
PDE# inactive to presence-detects inactive
FAST-PAGE-MODE READ-WRITE cycle time
Access time from RAS#
RAS# to column-address delay time
Row-address hold time
RAS# pulse width
RAS# pulse width (FAST PAGE MODE)
Random READ or WRITE cycle time
RAS# to CAS# delay time
READ command hold time (referenced to CAS#)
READ command setup time
Refresh period (2,048 cycles) (16MB)
Refresh period (4,096 cycles) (32MB)
RAS# precharge time
RAS# to CAS# precharge time
READ command hold time (referenced to RAS#)
RAS# hold time
READ-WRITE cycle time
RAS# to WE# delay time
WRITE command to RAS# lead time
Transition time (rise or fall)
WRITE command hold time
WRITE command hold time (referenced to RAS#)
WE# command setup time
WRITE command pulse width
WE# hold time (CBR Refresh)
WE# setup time (CBR Refresh)
DD
= +3.3V ±0.3V)
10
SYMBOL
t
t
PDOFF
t
t
t
t
PRWC
t
t
t
t
t
t
t
t
t
t
t
t
t
RASP
t
t
t
t
RWD
WCH
WRH
RWC
RWL
WCR
WCS
t
WRP
Micron Technology, Inc., reserves the right to change products or specifications without notice.
RAD
RAH
t
RAC
RAS
RCD
RCH
RRH
RSH
t
RCS
t
RPC
REF
REF
WP
PD
RC
RP
t
T
BUFFERED DRAM DIMMs
MIN
110
160
87
13
60
60
18
40
20
87
20
15
43
10
12
2
8
2
2
0
0
2
2
8
-6
125,000
10,000
MAX
10
60
32
64
50
2, 4 MEG x 72
UNITS
ms
ms
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
©1999, Micron Technology, Inc.
NOTES
17, 24
16, 24
18, 21
21, 28
21, 28
32
31
21
13
22
21
18
23
23
23
23
22
22
21