mt18hts25672pky-53e Micron Semiconductor Products, mt18hts25672pky-53e Datasheet - Page 2

• Manufacturer Part Number: mt18hts25672pky-53e
• Description: 2gb, 4gb X72, Dr 244-pin Ddr2 Mini-rdimm
• Manufacturer: Micron Semiconductor Products

Table 2:
Table 3:
Table 4:
PDF: 09005aef82218d23/Source: 09005aef82218d00
HTS18C256_512x72K.fm - Rev. B 9/07 EN
Part Number
MT18HTS25672(P)KY-667__
MT18HTS25672(P)KY-53E__
Part Number
MT18HTS51272(P)KY-667__
MT18HTS51272(P)KY-53E__
Parameter
Refresh count
Row address
Device bank address
Device page size per bank
TwinDie device configuration
Column address
Module rank address
Address Table
Part Numbers and Timing Parameters – 2GB Modules
Base Device: MT47H256M8THN,
Part Numbers and Timing Parameters – 4GB Modules
Base Device: MT47H512M8THM,
2
2
Notes:
1. Data sheets for the base devices can be found on Micron’s Web site.
2. All part numbers end with a two-place code (not shown) that designates component and
PCB revisions. Consult factory for current revision codes. Example: MT18HTS25672PKY-
667E1.
Module
Density
Module
Density
2GB
2GB
4GB
4GB
1
1
Configuration
Configuration
2Gb TwinDie DDR2 SDRAM
256 Meg x 72
256 Meg x 72
512 Meg x 72
512 Meg x 72
4Gb TwinDie DDR2 SDRAM
2Gb TwinDie (256 Meg x 8)
2GB, 4GB (x72, DR) 244-Pin DDR2 Mini-RDIMM
2
16K (A0–A13)
8 (BA0– BA2)
2 (S0#, S1#)
1K (A0–A9)
2GB
1KB
Bandwidth
Bandwidth
8K
Module
Module
5.3 GB/s
5.3 GB/s
4.3 GB/s
4.3 GB/s
Micron Technology, Inc., reserves the right to change products or specifications without notice.
Memory Clock/
Memory Clock/
3.75ns/533 MT/s
3.75ns/533 MT/s
3.0ns/667 MT/s
3.0ns/667 MT/s
Data Rate
Data Rate
4Gb TwinDie (512 Meg x 8)
©2006 Micron Technology, Inc. All rights reserved.
32K (A0–A14)
8 (BA0–BA2)
1K (A0–A9)
2 (S0#, S1#)
4GB
1KB
8K
(CL-
(CL-
Clock Cycles
Clock Cycles
t
t
5-5-5
4-4-4
5-5-5
4-4-4
Features
RCD-
RCD-
t
t
RP)
RP)