mt18hts25672pky-53e Micron Semiconductor Products, mt18hts25672pky-53e Datasheet

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mt18hts25672pky-53e

Manufacturer Part Number
mt18hts25672pky-53e
Description
2gb, 4gb X72, Dr 244-pin Ddr2 Mini-rdimm
Manufacturer
Micron Semiconductor Products
Datasheet
Table 1:
DDR2 SDRAM Mini-RDIMM
MT18HTS25672(P)K – 2GB
MT18HTS51272(P)K – 4GB
For component data sheets, refer to Micron’s Web site:
Features
• 244-pin, mini registered dual in-line memory
• Fast data transfer rates: PC2-3200, PC2-4200, or
• Supports ECC error detection and correction
• 2GB (512 Meg x 72) and 4GB (1,024 Meg x 72)
• V
• V
• JEDEC-standard 1.8V I/O (SSTL_18-compatible)
• Differential data strobe (DQS, DQS#) option
• 4n-bit prefetch architecture
• Multiple internal device banks for concurrent
• Supports redundant output strobe (RDQS/RDQS#)
• Programmable CAS latency (CL)
• Posted CAS additive latency (AL)
• WRITE latency = READ latency - 1
• Programmable burst length (BL) 4 or 8
• Adjustable data-output drive strength
• 64ms, 8,192-cycle refresh
• On-die termination (ODT)
• Serial presence-detect (SPD) with EEPROM
• Gold edge contacts
• Dual rank, TwinDie
• Phase-lock loop (PLL) to reduce loading on system
PDF: 09005aef82218d23/Source: 09005aef82218d00
HTS18C256_512x72K.fm - Rev. B 9/07 EN
module (Mini-RDIMM)
PC2-5300
operation
clock
Speed Grade
DD
DDSPD
= V
-667
-53E
DD
= +1.7V to +3.6V
Q = +1.8V
Key Timing Parameters
Products and specifications discussed herein are subject to change by Micron without notice.
TM
(2COB) DRAM devices
CL = 5
667
Data Rate (MT/s)
t
CK
CL = 4
533
533
www.micron.com
2GB, 4GB (x72, DR) 244-Pin DDR2 Mini-RDIMM
1
CL = 3
400
400
Figure 1:
Notes: 1. Contact Micron for industrial temperature
Options
• Parity
• Operating temperature
• Package
• Frequency/CAS latency
– Commercial (0°C ≤ T
– Industrial (–40°C ≤ T
– 244-pin DIMM (Pb-free)
– 3.0ns @ CL = 5 (DDR2-667)
– 3.75ns @ CL = 4 (DDR2-533)
PCB height 30.0mm (1.18in
Micron Technology, Inc., reserves the right to change products or specifications without notice.
2. CL = CAS (READ) latency; registered mode
module offerings.
will add one clock cycle to CL.
t
244-Pin Mini-RDIMM (MO-244)
RCD
(ns)
15
15
)
A
A
1
2
≤ +85°C)
≤ +70°C)
©2006 Micron Technology, Inc. All rights reserved.
(ns)
t
15
15
RP
Marking
Features
None
-53E
-667
t
(ns)
55
55
RC
P
Y
I

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mt18hts25672pky-53e Summary of contents

Page 1

... Micron Technology, Inc., reserves the right to change products or specifications without notice. 1 244-Pin Mini-RDIMM (MO-244) ) Marking 1 ≤ +70°C) A ≤ +85° module offerings. will add one clock cycle to CL RCD RP (ns) (ns ©2006 Micron Technology, Inc. All rights reserved. ...

Page 2

... Notes: 1. Data sheets for the base devices can be found on Micron’s Web site. 2. All part numbers end with a two-place code (not shown) that designates component and PCB revisions. Consult factory for current revision codes. Example: MT18HTS25672PKY- 667E1. PDF: 09005aef82218d23/Source: 09005aef82218d00 HTS18C256_512x72K.fm - Rev. B 9/07 EN ...

Page 3

Pin Assignments and Descriptions Table 5: Pin Assignments 244-Pin Mini-RDIMM Front Pin Symbol Pin Symbol Pin Symbol Pin Symbol REF DQ24 DQ0 34 DQ25 65 4 DQ1 35 ...

Page 4

... DQ and DQS pins. If RDQS is disabled, DQS9–DQS17 become DM0–DM8 and DQS9#–DQS17# are not used. SDA I/O Serial presence-detect data: SDA is a bidirectional pin used to transfer addresses and data (SSTL_18) into and out of the presence-detect portion of the module Output Parity error found on the address and control bus. Non-parity version is not used. RR ...

Page 5

... Symbol Type Description V Supply Ground – No connect: These pins are not connected on the module. NU – Not used: These pins are not required to be used. RFU – Reserved for future use. PDF: 09005aef82218d23/Source: 09005aef82218d00 HTS18C256_512x72K.fm - Rev. B 9/07 EN 2GB, 4GB (x72, DR) 244-Pin DDR2 Mini-RDIMM Pin Assignments and Descriptions Micron Technology, Inc ...

Page 6

Functional Block Diagram Figure 2: Functional Block Diagram RS1# RS0# DQS0 DQS0# DM0/RDQS0 NU/RDQS0# DM/ RDQS DQ DQ0 DQ DQ1 DQ DQ2 DQ3 DQ DQ DQ4 DQ DQ5 DQ DQ6 DQ DQ7 DQS1 DQS1# DM1/RDQS1 NU/RDQS1# DM/ RDQS DQ8 DQ ...

Page 7

... DDR2 SDRAM modules incorporate serial presence-detect (SPD). The SPD function is implemented using a 2,048-bit EEPROM. This nonvolatile storage device contains 256 bytes. The first 128 bytes are programmed by Micron to identify the module type and various SDRAM organizations and timing parameters. The remaining 128 bytes of storage are available for use by the customer ...

Page 8

... Electrical Specifications Stresses greater than those listed in Table 7 may cause permanent damage to the module. This is a stress rating only, and functional operation of the module at these or any other conditions outside those indicated in the device data sheet are not implied. Exposure to absolute maximum rating conditions for extended periods may adversely affect reliability ...

Page 9

I Specifications DD Table 9: I Specifications and Conditions – 2GB DD Values are shown for the MT47H256M8 DDR2 SDRAM only and are computed from values specified in the 2Gb TwinDie (256 Meg x 8) component data sheet Parameter/Condition Operating ...

Page 10

Table 10: I Specifications and Conditions – 4GB DD Values are shown for the MT47H512M8 DDR2 SDRAM only and are computed from values specified in the 4Gb TwinDie (512 Meg x 8) component data sheet Parameter/Condition Operating one bank active-precharge ...

Page 11

... Timing and switching specifications for the register listed above are critical for proper oper- ation of the DDR2 SDRAM registered DIMMs. These are meant subset of the param- eters for the specific device used on the module. Detailed information for this register is available in JEDEC standard JESD82. ...

Page 12

Table 12: PLL Specifications CU877 device or Equivalent JESD82-8.01 Parameter Symbol DC high-level input voltage low-level input voltage Input voltage (limits high-level input voltage IH DC low-level input voltage V IL ...

Page 13

Serial Presence-Detect Table 14: Serial Presence-Detect EEPROM DC Operating Conditions Parameter/Condition Supply voltage Input high voltage: Logic 1; All inputs Input low voltage: Logic 0; All inputs Output low voltage 3mA OUT Input leakage current GND ...

Page 14

... Number of SPD bytes used by Micron 1 Total number of bytes in SPD device 2 Fundamental memory type 3 Number of row addresses on DRAM 4 Number of column addresses on DRAM 5 DIMM height and module ranks 6 Module data width 7 Reserved 8 Module voltage interface levels t 9 SDRAM cycle time, CK (CL = MAX value, see ...

Page 15

... SPD revision 63 Checksum for bytes 0–62 ECC/ECC and parity 64 Manufacturer’s JEDEC ID code 65–71 Manufacturer’s JEDEC ID code 72 Manufacturing location 73–90 Module part number (ASCII) 91 PCB identification code 92 PCB identification code (continued) 93 Year of manufacture in BCD 94 Week of manufacture in BCD 95–98 Module serial number 99– ...

Page 16

... U9 U12 U11 3.6 (0.142) TYP 38.4 (1.512) TYP TYP ® property of their respective owners. characterization sometimes occur. 16 Module Dimensions U6 30.152 (1.187) 29.848 (1.175) 20.0 (0.787) TYP 10.0 (0.394) TYP Pin 122 U13 Pin 123 Micron Technology, Inc., reserves the right to change products or specifications without notice. ...

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