mt18htf25672py Micron Semiconductor Products, mt18htf25672py Datasheet - Page 12

• Manufacturer Part Number: mt18htf25672py
• Description: Ddr2 Sdram Rdimm
• Manufacturer: Micron Semiconductor Products

Table 11: DDR2 I
Values shown for MT47H128M4 DDR2 SDRAM only and are computed from values specified in the 512Mb (128 Meg x 4)
component data sheet
PDF: 09005aef80e5e752
htf18c64_128_256x72py.pdf - Rev. F 3/10 EN
Parameter
Operating bank interleave read current: All device banks interleaving
reads, I
=
HIGH, S# is HIGH between valid commands; Address bus inputs are stable
during deselects; Data bus inputs are switching
t
CK (I
OUT
DD
),
= 0mA; BL = 4, CL = CL (I
t
RC =
t
RC (I
DD
DD
Specifications and Conditions – 1GB (Continued)
),
t
RRD =
512MB, 1GB, 2GB (x72, ECC, SR) 240-Pin DDR2 SDRAM RDIMM
t
RRD (I
DD
), AL =
DD
),
t
t
RCD (I
RCD =
DD
t
RCD (I
) - 1 ×
DD
12
t
CK (I
); CKE is
DD
);
t
CK
Micron Technology, Inc. reserves the right to change products or specifications without notice.
Symbol
I
DD7
-80E/
5400
800
4320
-667
© 2003 Micron Technology, Inc. All rights reserved.
I
DD
-53E
4050
Specifications
3960
-40E
Units
mA