k4t51043qb-gce6 Samsung Semiconductor, Inc., k4t51043qb-gce6 Datasheet - Page 5

• Manufacturer Part Number: k4t51043qb-gce6
• Description: 512mb B-die Ddr2 Sdram
• Manufacturer: Samsung Semiconductor, Inc.

512Mb B-die DDR2 SDRAM
1.Key Features
CAS Latency
tRCD(min)
tRP(min)
tRC(min)
• JEDEC standard 1.8V ± 0.1V Power Supply
• VDDQ = 1.8V ± 0.1V
• 200 MHz f
• 4 Bank
• Posted CAS
• Programmable CAS Latency: 3, 4, 5
• Programmable Additive Latency: 0, 1 , 2 , 3 and 4
• Write Latency(WL) = Read Latency(RL) -1
• Burst Length: 4 , 8(Interleave/nibble sequential)
• Programmable Sequential / Interleave Burst Mode
• Bi-directional Differential Data-Strobe (Single-ended data-strobe is an optional feature)
• Off-Chip Driver(OCD) Impedance Adjustment
• On Die Termination
• Average Refesh Period 7.8us at lower then T
• Package: 60ball FBGA - 128Mx4/64Mx8 , 84ball FBGA - 32Mx16
Speed
CK
for 400Mb/sec/pin, 267MHz f
DDR2-667
5 - 5- 5
15
15
55
5
DDR2-533
4 - 4 - 4
15
15
55
4
DDR2-400
CK
Page 5 of 38
3- 3- 3
CASE
for 533Mb/sec/pin, 333MHz f
15
15
55
3
85°C, 3.9us at 85°C < T
Units
tCK
ns
ns
ns
CK
CASE
for 667Mb/sec/pin
< 95 °C
Rev. 0.91 (Sep. 2003)
DDR2 SDRAM
Preliminary