k4t51043qb-gce6 Samsung Semiconductor, Inc., k4t51043qb-gce6 Datasheet - Page 27

• Manufacturer Part Number: k4t51043qb-gce6
• Description: 512mb B-die Ddr2 Sdram
• Manufacturer: Samsung Semiconductor, Inc.

Preliminary
512Mb B-die DDR2 SDRAM
DDR2 SDRAM
bration procedure is used, it is possible to cause the device to operate outside the bounds of the default
device characteristics tables and figures. In such a situation, the timing parameters in the specification can-
not be guaranteed. It is solely up to the system application to ensure that the device is calibrated between the
minimum and maximum default values at all times. If this can’t be guaranteed by the system calibration pro-
cedure, re-calibration policy, and uncertainty with DQ to DQ variation, then it is recommended that only the
default values be used. The nominal maximum and minimum values represent the change in impedance
from nominal low and high as a result of voltage and temperature change from the nominal condition to the
maximum and minimum conditions. If calibrated at an extreme condition, the amount of variation could be as
much as from the nominal minimum to the nominal maximum or vice versa. The driver characteristics evalu-
ation conditions are:
o
Nominal 25
C (T case), VDDQ = 1.8 V, typical process
o
Nominal Low and Nominal High 25
C (T case), VDDQ = 1.8 V, any process
o
Nominal Minimum TBD
C (T case), VDDQ = 1.7 V, any process
o
Nominal Maximum 0
C (T case), VDDQ = 1.9 V, any process
Rev. 0.91 (Sep. 2003)
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