lrs1805a Sharp Microelectronics of the Americas, lrs1805a Datasheet - Page 4
![no-image](/images/no-image-200.jpg)
lrs1805a
Manufacturer Part Number
lrs1805a
Description
Stacked Chip Flash Memory Smartcombo
Manufacturer
Sharp Microelectronics of the Americas
Datasheet
1.LRS1805A.pdf
(57 pages)
- Current page: 4 of 57
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1. Description
The LRS1805A is a combination memory organized as 4,194,304 x16 bit flash memory and 1,048,576 x16 bit Smartcombo
RAM in one package.
Features
Flash Memory
Smartcombo RAM
- Power supply
- Operating temperature
- Not designed or rated as radiation hardened
- 72pin CSP (LCSP072-P-0811) plastic package
- Flash memory has P-type bulk silicon, and Smartcombo RAM has P-type bulk silicon
- Access Time
- Power supply current (The current for F-V
- Optimized Array Blocking Architecture
- Extended Cycling Capability
- Enhanced Automated Suspend Options
- Access Time
- Cycle time
- Power Supply current
Read
Word write
Block erase
Reset Power-Down
Standby
Eight 4K-word Parameter Blocks
One-hundred and twenty-seven 32K-word Main Blocks
Top Parameter Location
100,000 Block Erase Cycles
1,000 Block Erase Cycles and total 80 hours (F-V
Word Write Suspend to Read
Block Erase Suspend to Word Write
Block Erase Suspend to Read
Operating current
Standby current (Data retention current)
Sleep Mode (Data non-retention current)
CC
pin and F-V
(F-V
L R S 1 8 0 5 A
PP
PP
= 1.65V to 3.3V)
= 11.7V to 12.3V)
PP
pin)
• • • •
• • • •
• • • •
• • • •
• • • •
• • • •
• • • •
• • • •
• • • •
• • • •
• • • •
• • • •
• • • •
• • • •
2.7V to 3.3V(Flash)
2.7V to 3.1V(Smartcombo RAM)
-25°C to +85°C
60 mA
30 mA
25 µA
20 mA
80 µA
15 µA
85 ns
25 mA
25 µA
85 ns
85 to 32,000 ns
(Max.)
(Max. t
(Max.)
(Max.)
(Max.)
(Max. t
(Max.)
(Max.)
(Max. F-RST = GND ± 0.2V,
(Max. F-CE = F-RST = F-V
I
RC
CYCLE
OUT
, t
WC
(F-RY/BY) = 0mA)
= 200ns, CMOS Input)
= Min.)
CC
± 0.2V)
2
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