lrs1805a Sharp Microelectronics of the Americas, lrs1805a Datasheet - Page 21

• Manufacturer Part Number: lrs1805a
• Description: Stacked Chip Flash Memory Smartcombo
• Manufacturer: Sharp Microelectronics of the Americas

sharp
Notes:
Symbol
1. V
4. Block erase, full chip erase, (page buffer) program are inhibited when F-V
5. The Automatic Power Savings (APS) feature automatically places the device in power save mode after read cycle
2. All currents are in RMS unless otherwise noted. Typical values are the reference values at V
3. I
6. Sampled, not 100% tested.
7. F-V
8. Memory cell data is held. (S-CE
9. Memory cell data is not held. (S-CE
10. The operating current in dual work is the sum of the operating current (read, erase, program) in each plane.
V
V
V
V
V
I
I
I
V
V
V
I
PPLK
SLP
CC1
CC2
PPH1
PPH2
LKO
SB
OH
OL
IL
IH
unless V
mode, the device’s current draw is the sum of I
between V
completion. Standard address access timings (t
executed and should not be attempted.
Applying 12V ±0.3V to F-V
and supplies the memory cell current for block erasing and (page buffer) programming. Use similar power supply trace
widths and layout considerations given to the V
Applying 12V ±0.3V to F-V
F-V
CCWS
CC
PP
PP
includes both F-V
S-V
S-V
S-V
S-V
Input Low Voltage
Input High Voltage
Output Low Voltage
Output High Voltage
F-V
Operations
F-V
Erase,(PageBuffer) Program
F-V
(PageBuffer) Program
F-V
is not used for power supply pin. With F-V
may be connected to 12V ±0.3V for a total of 80 hours maximum.
and I
CC
CC
CC
CC
CC
PP
PP
PP
CC
PPLK
is specified.
CCES
Lockout during Normal
during Block Erase, Full Chip
during Block Erase,
Standby Current
Sleep Mode Current
Operation Current
Operation Current
Lockout Voltage
(max.) and V
are specified with the device de-selected. If read or (page buffer) program while in block erase suspend
Parameter
CC
and S-V
PP
PP
PPH1
during erase/program can only be done for a maximum of 1000 cycles on each block.
provides fast erasing or fast programming mode. In this mode, F-V
2
= “V
CC
(min.) , between V
2
.
DC Electrical Characteristics (Continue)
= “V
IH
”)
IL
”)
Notes
4,6,7
AVQV
CCWS
8
9
6
6
6
6
7
7
PP
CC
L R S 1 8 0 5 A
(T
) provide new data when addresses are changed.
power bus.
or I
PPH1
Min.
V
V
1.65
-0.3
-0.3
-0.3
11.7
V
A
1.5
CC
CC
PPLK
= -25°C to +85°C, F-V
CCES
(max.) and V
, block erase, full chip erase, (page buffer) program cannot be
Typ.
and I
12
3
CCR
Max.
V
+0.3
12.3
0.3
0.3
0.4
3.3
80
15
20
3
CC
or I
PPH2
CCW
PP
Unit
(min.) and above V
mA t
mA t
µA
µA
V
V
V
V
V
V
V
V
CC
, respectively.
V
= 2.7V to 3.3V, S-V
PPLK
S-CE
S-CE
I
I
CYCLE
CYCLE
OL
OH
= 0.5mA
= -0.5mA
, and not guaranteed in the range
1
2
= Min., I
= 1µs, I
S-V
0.2V
CC
PPH2
CC
Conditions
= 3.0V and T
PP
I/O
- 0.2V
I/O
(max.).
is power supply pin
CC
= 0mA
= 0mA
= 2.7V to 3.1V)
A
= +25 C
19