lrs1387 Sharp Microelectronics of the Americas, lrs1387 Datasheet - Page 22

• Manufacturer Part Number: lrs1387
• Description: Dual Work Boot Block Flash Sram
• Manufacturer: Sharp Microelectronics of the Americas

sharp
12. AC Electrical Characteristics for Flash Memory
12.1 AC Test Conditions
12.2 Read Cycle
Note:
Input pulse level
Input rise and fall time
Input and Output timing Ref. level
Output load
t
t
t
t
t
t
t
t
t
t
AVAV
AVQV
ELQV
APA
GLQV
PHQV
EHQZ
ELQX
GLQX
OH
1. Sampled, not 100% tested.
2. F-OE may be delayed up to t
Symbol
, t
GHQZ
Read Cycle Time
Address to Output Delay
F-CE to Output Delay
Page Address Access Time
F-OE to Output Delay
F-RST High to Output Delay
F-CE or F-OE to Output in High-Z, Whichever Occurs First
F-CE to Output in Low-Z
F-OE to Output in Low-Z
Output Hold from First Occurring Address, F-CE or F-OE change
ELQV
t
GLQV
Parameter
after the falling edge of F-CE without impact to t
L R S1 3 8 7
1TTL + C
0 V to 2.7 V
1.35 V
5 ns
L
(50pF)
(T
A
= -25°C to +85°C, F-V
Notes
2
2
1
1
1
1
Min.
ELQV
85
0
0
0
.
Max.
CC
150
85
85
35
20
20
= 2.7V to 3.3V)
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
20