lrs1387 Sharp Microelectronics of the Americas, lrs1387 Datasheet - Page 21

• Manufacturer Part Number: lrs1387
• Description: Dual Work Boot Block Flash Sram
• Manufacturer: Sharp Microelectronics of the Americas

sharp
Notes:
Symbol
1. V
2. All currents are in RMS unless otherwise noted. Typical values are the reference values at V
3. I
4. Block erase, full chip erase, (page buffer) program are inhibited when F-V
5. The Automatic Power Savings (APS) feature automatically places the device in power save mode after read cycle
6. Sampled, not 100% tested.
7. F-V
8. The operating current in dual work is the sum of the operating current (read, erase, program) in each plane.
V
V
V
V
V
I
I
V
I
V
V
I
PPLK
CC1
CC2
PPH1
PPH2
SB1
LKO
SB
OH
OL
IH
IL
unless V
mode, the device’s current draw is the sum of I
between V
completion. Standard address access timings (t
executed and should not be attempted.
Applying 12V ±0.3V to F-V
and supplies the memory cell current for block erasing and (page buffer) programming. Use similar power supply trace
widths and layout considerations given to the V
Applying 12V ±0.3V to F-V
F-V
CCWS
CC
PP
PP
includes both F-V
S-V
S-V
S-V
S-V
Input Low Voltage
Input High Voltage
Output Low Voltage
Output High Voltage
F-V
Operations
F-V
Erase,(PageBuffer) Program
F-V
(PageBuffer) Program
F-V
is not used for power supply pin. With F-V
may be connected to 12V ±0.3V for a total of 80 hours maximum.
and I
CC
CC
CC
CC
CC
PP
PP
PP
CC
PPLK
is specified.
CCES
Lockout during Normal
during Block Erase, Full Chip
during Block Erase,
Standby Current
Standby Current
Operation Current
Operation Current
Lockout Voltage
(max.) and V
are specified with the device de-selected. If read or (page buffer) program while in block erase suspend
Parameter
CC
and S-V
PP
PP
PPH1
during erase/program can only be done for a maximum of 1000 cycles on each block.
provides fast erasing or fast programming mode. In this mode, F-V
CC
(min.) , between V
.
DC Electrical Characteristics (Continue)
Notes
4,6,7
AVQV
CCWS
6
6
6
6
7
7
PP
CC
L R S1 3 8 7
) provide new data when addresses are changed.
power bus.
or I
PPH1
Min. Typ.
V
1.65
11.7
-0.2
-0.2
V
2.2
1.5
CC
PPLK
CCES
(max.) and V
, block erase, full chip erase, (page buffer) program cannot be
and I
12
2
3
(1)
CCR
Max.
V
+0.2
12.3
0.6
0.4
0.4
3.3
25
50
3
8
CC
or I
PPH2
CCW
PP
Unit
(min.) and above V
mA S-CE
mA
mA
(T
µA
V
V
V
V
V
V
V
V
, respectively.
A
V
= -25°C to +85°C, V
PPLK
S-CE
S-CE
S-CE
S-CE
V
S-CE
S-CE
V
or
I
I
OL
OH
IN
IN
= 0.5mA
, and not guaranteed in the range
= -0.5mA
= V
0.2V
1
2
2
1
2
1
, S-CE
S-V
= V
= V
= V
IL
0.2V
S-V
0.2V,
CC
IL
IL
IH
or V
CC
,
PPH2
,
2
CC
Conditions
-0.2V
= 3.0V and T
IH
PP
-0.2V,
S-V
(max.).
is power supply pin
CC
CC
= 2.7V to 3.3V)
t
I
t
I
- 0.2V or
CYCLE
CYCLE
I/O
I/O
= 0mA
= 0mA
A
=+25 C
= Min.
= 1µs
19