s71gs256nc0bawak0 Meet Spansion Inc., s71gs256nc0bawak0 Datasheet - Page 183

• Manufacturer Part Number: s71gs256nc0bawak0
• Description: Stacked Multi-chip Product Mcp 256/128 Megabit 16/8m X 16-bit Cmos 3.0 Volt Vcc And 1.8 V Vio Mirrorbit Tm Uniform Sector Page-mode Flash Memory With 64/32 Megabit 4/2m X 16-bit 1.8v Psram
• Manufacturer: Meet Spansion Inc.

DC Characteristics
Notes:
1. This parameter is specified with the outputs disabled to avoid external loading effects. The user must add current
2. This device assumes a standby mode if the chip is disabled (CE# HIGH). It will also automatically go into a standby
3. ISB (MAX) values measured with PAR set to FULL ARRAY and TCR set to +85°C.
Notes:
1. ITCR (MAX) values measured with FULL ARRAY refresh.
2. This device assumes a standby mode if the chip is disabled (CE# HIGH). It will also automatically go into a standby mode
December 15, 2004 cellRAM_02_A0
T emperature Compensated
Refresh Standby Current
Output Leakage Current
Write Operating Current
required to drive output capacitance expected in the actual system.
mode whenever all input signals are quiescent (not toggling), regardless of the state of CE#, LB#, and UB#. In
order to achieve low standby current, all inputs must be either VCCQ or VSS.
whenever all input signals are quiescent (not toggling), regardless of the state of CE#, LB#, and UB#. In order to achieve
low standby current, all inputs must be either VCCQ or VSS.
Read Operating Current
Input Leakage Current
MAX Standby Current
Output High Voltage
Output Low Voltage
I/ O Supply Voltage
Input High Voltage
Input Low Voltage
Supply Voltage
Description
Description
Wireless Temperature (-25°C ≤ T
I ndustrial T emperature (-40°C < T
Table 70. Temperature Compensated Refresh Specifications and Conditions
Table 69. Electrical Characteristics and Operating Conditions
A d v a n c e
V
IN
Chip Disabled
= V
Conditions
Chip Enabled, I
CC
V
V
V
V
IN
IN
IN
I
I
Chip Disabled
Chip Disabled
Q or 0V ,
OE# = V
IN
Chip Enabled
OL
OH
Conditions
= V
= V
= V
= 0 to V
= +0.2mA
= -0.2mA
1.8 V
CCQ
CCQ
CCQ
I n f o r m a t i o n
IH
or 0V
or 0V
or 0V
OUT
CCQ
or
Symbol
C
CellularRAM-2A
I
TCR
C
≤ +85°C )
= 0
< +85°C )
Density
64 Mb
Symbol
V
I
I
V
V
V
V
I
V
I
I
CC1
CC2
CCQ
LO
SB
OH
CC
OL
LI
IH
IL
0.80 V
Temperature
Max Case
-0.20
1.70
1.70
Min
1.4
+ 85° C
+70°C
+45°C
+15°C
CCQ
V
0.20 V
CC
Typ
1.95
2.25
Q + 0.2
Max
100
0.4
25
25
1
1
CCQ
TBD
TBD
Max
100
50
Units
mA
mA
µA
µA
µA
V
V
V
V
V
V
Notes
1,
1,
2,
Units
2
µA
2
2
3
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