m52s64164a Elite Semiconductor Memory Technology Inc., m52s64164a Datasheet - Page 35
m52s64164a
Manufacturer Part Number
m52s64164a
Description
1m X 16 Bit X 4 Banks Synchronous Dram
Manufacturer
Elite Semiconductor Memory Technology Inc.
Datasheet
1.M52S64164A.pdf
(47 pages)
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ESMT
M52S64164A
Page Write Cycle at Different Bank @ Burst Length = 4
*Note : 1. To interrupt burst write by Row precharge , DQM should be asserted to mask invalid input data.
2. To interrupt burst write by Row precharge , both the write and the precharge banks must be the same.
Publication Date: Sep. 2008
Elite Semiconductor Memory Technology Inc.
Revision: 1.4
35/47
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