tc59lm818dmbi TOSHIBA Semiconductor CORPORATION, tc59lm818dmbi Datasheet - Page 48
tc59lm818dmbi
Manufacturer Part Number
tc59lm818dmbi
Description
288mbits Network Fcram2 I-version ? 4,194,304-words ? 4 Banks ? 18-bits
Manufacturer
TOSHIBA Semiconductor CORPORATION
Datasheet
1.TC59LM818DMBI.pdf
(55 pages)
- Current page: 48 of 55
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DATA INPUT/OUTPUT: DQ0~DQ17
data of DQ0 to DQ17 are outputted synchronizing with the both edges of QS output signal.
DATA STROBE: DS, QS
POWER SUPPLY: V
REFERENCE VOLTAGE: V
Method of data strobe is chosen by Extended mode register.
(1) Unidirectional DS / QS mode
(2) Unidirectional DS / Free running QS mode
The input data of DQ0 to DQ17 are taken in synchronizing with the both edges of DS input signal. The output
V
V
V
DD
DDQ
REF
Both edges of QS are used for trigger signal of all DQs at Read operation. During Write, Auto-Refresh and
NOP cycle, QS assert always “Low” level.
Both edges of QS are used for trigger signal of all DQs at Read operation. QS assert always toggle signal.
This strobe type is easy to use for pin to pin connect application.
and V
DS is input signal and QS is output signal. Both edges of DS are used to sample all DQs at Write operation.
DS is input signal and QS is output signal. Both edge of DS are used to sample all DQs at Write operation.
is reference voltage for all input signals.
and V
SS
SSQ
are power supply pins for memory core and peripheral circuits.
are power supply pins for the output buffer.
DD
, V
DDQ
REF
, V
SS
, V
SSQ
TC59LM818DMBI-37
2005-03-07 48/55
Rev 1.2
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