ap10n70r APEC, ap10n70r Datasheet

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ap10n70r

Manufacturer Part Number
ap10n70r
Description
N-channel Enhancement Mode Power Mosfet
Manufacturer
APEC
Datasheet
1.AP10N70R.pdf (6 pages)
▼ 100% Avalanche Test
▼ Fast Switching Characteristic
▼ Simple Drive Requirement
V
V
I
I
I
P
E
I
T
T
Rthj-c
Rthj-a
Data & specifications subject to change without notice
Description
Absolute Maximum Ratings
Thermal Data
AP10N70 series are specially designed as main switching devices for
universal 90~265VAC off-line AC/DC converter applications.Both TO-220
and TO-262 type provide high blocking voltage to overcome voltage surge
and sag in the toughest power system with the best combination of fast
switching,ruggedized design and cost-effectiveness.
The TO-220 and TO-262 package is widely preferred for commercial-
industrial applications. The device is suited for switch mode power supplies,
DC-AC converters and high current high speed switching circuits.
D
D
DM
AR
STG
J
DS
GS
D
AS
@T
@T
@T
C
C
Symbol
Symbol
C
=25℃
=100℃
=25℃
Advanced Power
Electronics Corp.
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Total Power Dissipation
Linear Derating Factor
Single Pulse Avalanche Energy
Avalanche Current
Storage Temperature Range
Operating Junction Temperature Range
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient
Parameter
1
Parameter
GS
GS
@ 10V
@ 10V
2
G
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D
S
RoHS-compliant Product
-55 to 150
-55 to 150
Rating
BV
R
I
D
± 30
1.39
600
174
6.3
10
40
50
10
DS(ON)
G
DSS
G
D
Value
0.72
D
S
62
AP10N70R/P
S
TO-220(P)
TO-262(R)
201022073-1/4
0.6Ω
600V
Units
W/℃
10A
℃/W
℃/W
Unit
W
mJ
℃
℃
V
V
A
A
A
A

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ap10n70r Summary of contents

Page 1

... Thermal Data Symbol Rthj-c Maximum Thermal Resistance, Junction-case Rthj-a Maximum Thermal Resistance, Junction-ambient Data & specifications subject to change without notice N-CHANNEL ENHANCEMENT MODE POWER MOSFET G Parameter @ 10V GS @ 10V Parameter AP10N70R/P RoHS-compliant Product BV 600V D DSS R 0.6Ω DS(ON) I 10A TO-262( TO-220(P) ...

Page 2

... AP10N70R/P Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current (T DSS Drain-Source Leakage Current (T I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge gs Q Gate-Drain ("Miller") Charge gd t Turn-on Delay Time ...

Page 3

T = Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics 1.3 1.2 1.1 1 0.9 0.8 - 100 Junction ...

Page 4

AP10N70P =10A D V =320V =400V DS V =480V Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 100 = ...

Page 5

ADVANCED POWER ELECTRONICS CORP. Package Outline : TO-262 Part Marking Information & Packing : TO-262 10N70R LOGO LOGO YWWSSS ...

Page 6

ADVANCED POWER ELECTRONICS CORP. Package Outline : TO-220 E1 E φ Part Marking Information & Packing : TO-220 10N70R LOGO YWWSSS Part Number Package Code Date Code (YWWSSS) ...

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