pa2423mb SiGe Semiconductor, pa2423mb Datasheet - Page 4

• Manufacturer Part Number: pa2423mb
• Description: 2.4 Ghz Bluetooth Class 1 Power Amplifier Ic
• Manufacturer: SiGe Semiconductor

AC Electrical Characteristics
Notes: (1) Guaranteed by production test at T
DOC# 05PDS001 S Rev 9 S
dP
Conditions
f
P
'P
PAE
G
2f, 3f, 4f, 5f
IS
IS
STAB
L-U
out
OUT
Symbol
VAR
21
12
temp
I
I
OFF
/dV
CTL
(2) Guaranteed by design only
(3) Guaranteed by design and characterization
(4) Harmonic levels are greatly affected by topology of external matching networks.
V
Input and Output externally matched to 5:unless otherwise noted.
3
1
1
3
3
3
3,4
2
2
2
Note
CC0
= V
CC1
Frequency Range
Output Power @ P
Output Power @ P
Output Power variation over temperature (-4qC <T
Control Voltage Sensitivity
Power Added Efficiency at +22.5 dBm Output Power
Gain Variation over band (2400-2500 MHz)
Harmonics
Isolation in “OFF” State, P
Reverse Isolation
Stability (P
= V
CC2
IN
= V
= +2dBm, Load VSWR = 6:1)
RAMP
IN
IN
=3.3V, V
=+2 dBm, V
=+2 dBm, V
Parameter
IN
A
= +2dBm, V
07/26/2001
CTL
=25qC.
2.4 GHz Bluetooth Class 1 Power Amplifier IC
= 3.3V, PIN =+2 dBm, T
CTL
CTL
= 3.3V
=0.4V
RAMP
= 0V
A
<+8qC)
A
=25qC, f =2.45 GHz,
Production Information
Min.
2400
All non-harmonically related
outputs less than -50 dBc
21
20
32
Typ.
22.7
-20
0.7
-35
45
25
42
1
PA2423MB
2500
23.5
Page 4 of 10
120
Max. Unit
1.0
-30
0
2
dBm/V
MHz
dBm
dBm
dBc
dB
dB
dB
dB
%