pa2423mb SiGe Semiconductor, pa2423mb Datasheet - Page 3

• Manufacturer Part Number: pa2423mb
• Description: 2.4 Ghz Bluetooth Class 1 Power Amplifier Ic
• Manufacturer: SiGe Semiconductor

Absolute Maximum Ratings
Operation in excess of any one of above Absolute Maximum Ratings may result in permanent damage. This
device is a high performance RF integrated circuit with ESD rating < 600V and is ESD sensitive. Handling
and assembly of this device should be at ESD protected workstations.
DC Electrical Characteristics
Conditions: V
DOC# 05PDS001 S Rev 9 S
Symbol
'
V
ICC
V
V
I
RAMP
I
I
CTL
CC
stby
CTL
CC
temp
Input and Output externally matched to 5:unless otherwise
CC0
1
3
1
3
3
1
Note
= V
V
V
V
IN
T
T
T
Symbol
CC
CTL
RAMP
A
STG
j
CC1
= V
Supply Voltage
Supply Current (I
Supply Current variation over temperature from T
(-4qC <T
PA Output Power Control Voltage Range
Current sourced by V
Logic High Voltage
Logic Low Voltage
Leakage Current when V
CC2
= V
Supply Voltage
Control Voltage
Ramping Voltage
RF Input Power
Operating Temperature Range
Storage Temperature Range
Maximum Junction Temperature
A
RAMP
<+8qC)
= 3.3V, V
CC
Parameter
= I
CTL
VCC0
ramp
Parameter
CTL
Pin
+ I
= 0V, V
07/26/2001
= 3.3V, P
2.4 GHz Bluetooth Class 1 Power Amplifier IC
VCC1
+I
ctl
= high
IN
VCC2
= +2dBm,T
), V
-0.3
-0.3
-0.3
-4
-4
Min.
CTL
noted.
A
= 3.3V
= 25qC
A
=25qC, f = 2.45GHz,
Max.
+150
+15
+3.6
V
V
+8
+8
CC
CC
Production Information
Min.
2.0
3
0
V
V
V
dBm
qC
qC
qC
Unit
Typ.
125
200
3.3
0.5
25
PA2423MB
Page 3 of 10
Max.
V
150
250
3.6
0.8
10
CC
Unit
mA
PA
PA
%
V
V
V
V