m58wr032et STMicroelectronics, m58wr032et Datasheet - Page 63

• Manufacturer Part Number: m58wr032et
• Description: 32 Mbit 2mb X 16, Multiple Bank, Burst 1.8v Supply Flash Memory
• Manufacturer: STMicroelectronics

Note: 1. The variable P is a pointer which is defined at CFI offset 15h.
(P+35)h =6Eh
(P+3A)h =73h
(P+3B)h =74h
(P+3C)h =75h
(P+3D)h =76h
(P+3E)h =77h
(P+36)h =6Fh
(P+37)h =70h
(P+38)h =71h
(P+39)h =72h
M58WR032ET (top)
Offset
2. Bank Regions. There are two Bank Regions, Region 1 contains all the banks that are made up of main blocks only, Region 2 con-
tains the banks that are made up of the parameter and main blocks.
Data
07h
00h
20h
00h
64h
00h
01h
03h
(P+3D)h =76h
(P+3E)h =77h
M58WR032EB (bottom)
Offset
Data
Bank Region 2 Erase Block Type 2 Information
Bits 0-15: n+1 = number of identical-sized erase blocks
Bits 16-31: n×256 = number of bytes in erase block region
Minimum block erase cycles × 1000
Bank Region 2 (Erase Block Type 2): BIts per cell, internal ECC
Bits 0-3: bits per cell in erase region
Bit 4: reserved for “internal ECC used”
BIts 5-7: reserved
Bank Region 2 (Erase Block Type 2): Page mode and
synchronous mode capabilities (defined in
Bit 0: Page-mode reads permitted
Bit 1: Synchronous reads permitted
Bit 2: Synchronous writes permitted
Bits 3-7: reserved
Feature Space definitions
Reserved
Bank Region 2 (Erase Block Type 2)
M58WR032ET, M58WR032EB
Description
Table
36.)
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