m58wr032et STMicroelectronics, m58wr032et Datasheet - Page 65
m58wr032et
Manufacturer Part Number
m58wr032et
Description
32 Mbit 2mb X 16, Multiple Bank, Burst 1.8v Supply Flash Memory
Manufacturer
STMicroelectronics
Datasheet
1.M58WR032ET.pdf
(81 pages)
- Current page: 65 of 81
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Figure 22. Double Word Program Flowchart and Pseudo code
Note: 1. Status check of b1 (Protected Block), b3 (V
2. If an error is found, the Status Register must be cleared before further Program/Erase operations.
3. Address 1 and Address 2 must be consecutive addresses differing only for bit A0.
4. Any address within the bank can equally be used.
a sequence.
Write Address 1
Write Address 2
& Data 1 (3, 4)
Read Status
& Data 2 (3)
Register (4)
Write 35h
SR7 = 1
SR3 = 0
SR4 = 0
SR1 = 0
Start
End
YES
YES
YES
YES
NO
NO
NO
NO
Program to Protected
Block Error (1, 2)
V PP Invalid
Error (1, 2)
Error (1, 2)
Program
PP
Invalid) and b4 (Program Error) can be made after each program operation or after
double_word_program_command (addressToProgram1, dataToProgram1,
{
if (status_register.SR3==1) /*V PP invalid error */
if (status_register.SR4==1) /*program error */
if (status_register.SR1==1) /*program to protect block error */
}
error_handler ( ) ;
error_handler ( ) ;
error_handler ( ) ;
do {
writeToFlash (addressToProgram1, 0x35);
writeToFlash (addressToProgram1, dataToProgram1) ;
writeToFlash (addressToProgram2, dataToProgram2) ;
the Program command*/
} while (status_register.SR7== 0) ;
status_register=readFlash (addressToProgram) ;
/* E or G must be toggled*/
/*Memory enters read status state after
M58WR032ET, M58WR032EB
/*see note (4)*/
addressToProgram2, dataToProgram2)
"see note (4)"
/*see note (3) */
/*see note (3) */
AI06171b
65/81
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