lh28f128bfht-pbtl75a Sharp Microelectronics of the Americas, lh28f128bfht-pbtl75a Datasheet - Page 14

• Manufacturer Part Number: lh28f128bfht-pbtl75a
• Description: Flash Memory 16mbit 8mbitx16
• Manufacturer: Sharp Microelectronics of the Americas

NOTES:
1. Refer to DC Characteristics for V
2. X can be V
3. RST# at GND±0.2V ensures the lowest power consumption.
4. Command writes involving block erase, full chip erase, (page buffer) program or OTP program are reliably
5. Refer to Table 5 for valid D
6. Never hold OE# low and WE# low at the same timing.
7. Query code = Common Flash Interface (CFI) code.
8. RY/BY# is V
Read Array
Output Disable
Standby
Reset
Read Identifier
Codes/OTP
Read Query
Read Status
Register
Write
executed when V
(page buffer) program or OTP program algorithms. It is High Z during when the WSM is not busy, in
block erase suspend mode (with program and page buffer program inactive), (page buffer) program suspend
mode, or reset mode.
Mode
IL
OL
or V
Notes
4,5,6
when the WSM (Write State Machine) is executing internal block erase, full chip erase,
6,7
CC
6
3
6
6
IH
=2.7V-3.3V.
for control pins and addresses.
RST#
V
V
V
V
V
V
V
V
IH
IH
IH
IH
IH
IH
IH
IL
IN
during a write operation.
IL
Table 4. Bus Operation
CE#
V
V
V
V
V
V
V
or V
X
IH
IL
IL
IL
IL
IL
IL
IH
voltages.
OE#
V
V
V
V
V
V
X
X
IL
IH
IL
IL
IL
IH
LHF12F17
WE#
V
V
V
V
V
V
X
X
IH
IH
IH
IH
IH
IL
(1, 2)
Address
Table 3
See
X
X
X
X
X
X
X
Table 3
DQ
High Z
High Z
High Z
D
D
D
D
See
OUT
OUT
OUT
IN
15-0
RY/BY#
High Z
High Z
High Z
High Z
X
X
X
X
(8)
Rev. 0.04
11