is42s16100c1 Integrated Silicon Solution, Inc., is42s16100c1 Datasheet - Page 5

• Manufacturer Part Number: is42s16100c1
• Description: 512k Words X 16 Bits X 2 Banks 16-mbit Synchronous Dynamic Ram
• Manufacturer: Integrated Silicon Solution, Inc.

IS42S16100C1
DC RECOMMENDED OPERATING CONDITIONS
CAPACITANCE CHARACTERISTICS
Notes:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This
2. All voltages are referenced to GND.
3. V
Integrated Silicon Solution, Inc. — www.issi.com —
Rev. D
11/03/06
ABSOLUTE MAXIMUM RATINGS
Symbol
C
C
CI/O
is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the
operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended
periods may affect reliability.
Symbol
V
V
V
V
P
I
T
T
V
CS
IH
Symbol
OPR
STG
IN
IN
OUT
DD
DDQ MAX
IN
D MAX
DD
1
2
(max) = V
V
V
, V
MAX
IH
IL
DDQ
DDQ
Parameter
Input Capacitance: A0-A11
Input Capacitance: (CLK, CKE, CS, RAS, CAS, WE, LDQM, UDQM)
Data Input/Output Capacitance: DQ0-DQ15
Parameter
Supply Voltage
Input High Voltage
Input Low Voltage
+ 2.0V with a pulse width ≤ 3 ns.
Parameters
Maximum Supply Voltage
Maximum Supply Voltage for Output Buffer
Input Voltage
Output Voltage
Allowable Power Dissipation
Output Shorted Current
Operating Temperature
Storage Temperature
(4)
(3)
(1)
(1,2)
Min.
-0.3
3.0
2.0
(At T
A
1-800-379-4774
= 0 to +25°C, VDD = VDDQ = 3.3 ± 0.3V, f = 1 MHz)
Typ.
3.3
—
—
(2)
(
At T
V
DD
Max.
+0.8
3.6
A
+ 0.3
= 0 to +70°C)
Com
Ind.
Unit
V
V
V
–1.0 to +4.6 V
–1.0 to +4.6 V
–1.0 to +4.6 V
–1.0 to +4.6 V
–55 to +150 °C
-40 to +85
0 to +70
Rating
50
Typ.
1
—
—
—
Unit
W
mA
°C
°C
Max.
4
4
5
ISSI
Unit
pF
pF
pF
®
5