hsdl-3203 Avago Technologies, hsdl-3203 Datasheet - Page 5

• Manufacturer Part Number: hsdl-3203
• Description: Small Profile Package Irda Data Compliant Low Power 115.2 Kbit/s Infrared Transceiver - Agilent Hewlett-packard
• Manufacturer: Avago Technologies

5
Electrical and Optical Specifications
Specifications hold over the recommended operating conditions unless otherwise noted. Unspecified test conditions
can be anywhere in their operating range. All typical values are at 25˚C and 3.0 V unless otherwise noted.
Parameter
Receiver
RXD Output Voltage Logic Low V
Viewing Angle
Logic High Receiver Input
Irradiance
Logic Low Receiver Input
Irradiance
Peak Sensitivity Wavelength
RXD Pulse Width
RXD Rise and Fall Times
Receiver Latency Time
Receiver Wake Up Time
Transmitter
Radiant Intensity
Peak Wavelength
Spectral Line Half Width
Viewing Angle
Optical Pulse Width
Optical Rise and Fall Times
Maximum Optical Pulse Width
LED Anode ON State Voltage
LED Anode OFF State Leakage
Transceiver
TXD and SD Input
Currents
Supply Current
Notes:
14. For in-band signals 115.2 kbit/s where 8.1 W/cm
15. Wake up time is measured from SD pin HIGH to LOW transition or V
16. Typical value is at EI = 10 mW/cm
Logic High V
Logic Low I
Logic High I
Shutdown I
Idle
Active
Receiver
2
, maximum value is at EI = 500 mW/cm
2
EI
EI
tpw
t
t
t
EI
2
tpw
tr (EI)
tf (EI)
tpw
(max)
V
(LEDA)
I
(LEDA)
I
I
Symbol Min.
L
W
LK
L
H
CCI
CC2
CC3
r
OL
OH
p
, t
p
ON
H
L
H
1/2
1/2
1/2
f
2
0
V
–0.2
30
0.0081
1.5
4
22.5
30
1.5
–1
CC
EI 500 mW/cm
Typ. Max. Units
880
2.5
25
25
50
8
875
35
1.6
20
0.01 1.0
–0.01 1
0.01 1
10
2.5
2.6
CC
power ON to valid RXD output.
2
0.4
V
500
0.3
4.0
100
50
100
28.8
60
2
600
50
1.5
200
4
5
.
2
CC
.
V
V
˚
mW/cm
nm
ns
mW/sr
mW/sr
nm
nm
˚
ns
V
nA
mA
mA
W/cm
s
s
s
s
s
A
A
A
2
2
I
I
EI 0.3 W/cm
For in-band signals 115.2 kbit/s
For in-band signals
tpw(EI) = 1.6 s, C
I
I
tpw(TXD) = 1.6 s
TXD pin stuck high
I
V
0 V
V
V
V
EI = 0
V
Conditions
tpw(TXD) = 1.6 s
V
V
OL
OH
LEDA
LEDA
LEDA
1/2
1/2
IH
LEDA
I
I
CC
CC
CC
(TXD) 1/3 V
= 200 A, for in-band EI
(TXD) = 2.7 V
= 200 A, for in-band
= 3.6 V, V
= 3.6 V, V
2/3 V
= 3.6 V, V
I
= 50 mA, T
= 250 mA, T
= 50 mA,
15˚
15˚
= V
1/3 V
CC
CC
= 3.6 V,
I
CC
I
(TXD) 1/3 V
(TXD) 1/3 V
SD
2
CC
A
A
= 25˚C,
L
= 25˚C,
= 10 pF
V
CC
–0.5
CC
CC
,
14
13
13
14
14
15
16
Note