mc68hc908gr16 Freescale Semiconductor, Inc, mc68hc908gr16 Datasheet - Page 42

• Manufacturer Part Number: mc68hc908gr16
• Description: M68hc08 Microcontrollers Microcontroller
• Manufacturer: Freescale Semiconductor, Inc

Memory
This program sequence is repeated throughout the memory until all data is programmed.
Do not exceed t
programming time to the same row before next erase. t
Refer to
The time between programming the FLASH address change (step 7 to step 7), or the time between the
last FLASH programmed to clearing the PGM bit (step 7 to step 10) must not exceed the maximum
programming time, t
42
10. Clear the PGM bit.
11. Wait for a time, t
12. Clear the HVEN bit.
13. After time, t
8. Wait for a time, t
9. Repeat step 7 and 8 until all desired bytes within the row are programmed.
t
NVX
= t
20.15 Memory
NVH
The COP register at location $FFFF should not be written between steps
5-12, when the HVEN bit is set. Since this register is located at a valid
FLASH address, unpredictable behavior may occur if this location is written
while HVEN is set.
Programming and erasing of FLASH locations cannot be performed by
code being executed from the FLASH memory. While these operations
must be performed in the order shown, other unrelated operations may
occur between the steps. Do not exceed t
Memory
It is highly recommended that interrupts be disabled during program/ erase
operations.
Be cautious when programming the FLASH array to ensure that
non-FLASH locations are not used as the address that is written to when
selecting either the desired row address range in step 3 of the algorithm or
the byte to be programmed in step 7 of the algorithm. This applies
particularly to $FFD4–$FFDF.
+ t
PROG
PGS
RCV
PROG
maximum or t
+ (t
(typical 1 μs), the memory can be accessed in read mode again.
PROG
NVH
Characteristics.
Characteristics.
(1)
PROG
maximum.
(minimum 5 μs).
(minimum 30 μs).
x 32) <= t
MC68HC908GR16 Data Sheet, Rev. 5.0
HV
maximum. t
HV
maximum
CAUTION
NOTE
NOTE
HV
is defined as the cumulative high voltage
HV
PROG
must satisfy this condition:
maximum, see
20.15
Freescale Semiconductor