tda8932btw-n2 NXP Semiconductors, tda8932btw-n2 Datasheet - Page 21
tda8932btw-n2
Manufacturer Part Number
tda8932btw-n2
Description
Tda8932b Class-d Audio Amplifier
Manufacturer
NXP Semiconductors
Datasheet
1.TDA8932BTW-N2.pdf
(48 pages)
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NXP Semiconductors
Table 13.
V
[1]
[2]
[3]
[4]
[5]
TDA8932B_3
Product data sheet
Symbol
V
V
CMRR
P
P
po
n(o)
O(mute)
o(RMS)
= 22 V; R
R
THD+N is measured in a bandwidth of 20 Hz to 20 kHz, AES17 brick wall.
Maximum V
B = 20 Hz to 20 kHz, AES17 brick wall.
Output power is measured indirectly; based on R
Two layer application board (55 mm
s
is the series resistance of inductor and capacitor of low-pass LC filter in the application.
Parameter
noise output voltage
mute output voltage
common mode rejection ratio
output power efficiency
RMS output power
BTL characteristics (Continued)
L
= 8 ; f
ripple
= 2 V (p-p); R
i
= 1 kHz; f
s
osc
= 0 .
= 320 kHz; R
45 mm), 35 m copper, FR4 base material in free air with natural convection.
Conditions
R
Mute mode; V
f
V
P
P
continuous time output power
R
R
short time output power
R
i
R
DSon
i(cm)
o
o
s
s
= 1 kHz
L
L
L
Operating mode
Mute mode
THD+N = 0.5 %; f
THD+N = 0.5 %; f
THD+N = 10 %; f
THD+N = 10 %; f
THD+N = 0.5 %; f
THD+N = 0.5 %; f
THD+N = 10 %; f
THD+N = 10 %; f
THD+N = 0.5 %
THD+N = 10 %
L
THD+N = 0.5 %
THD+N = 10 %
= 0
= 15 W; V
= 30 W; V
= 4 ; V
= 8 ; V
= 4 ; V
< 0.1
= 8 ; V
Rev. 03— 21 June 2007
measurement.
= 1 V (RMS)
[1]
P
P
P
P
; T
P
P
= 12 V
= 22 V
= 15 V
= 29 V
i
= 12 V and R
= 22 V and R
= 1 V (RMS) and
amb
= 25 C; unless otherwise specified.
i
i
i
i
i
i
i
i
= 1 kHz
= 100 Hz
= 1 kHz
= 100 Hz
= 1 kHz
= 100 Hz
= 1 kHz
= 100 Hz
L
L
= 4
= 8
[4]
[4]
[5]
[5]
Min
-
-
-
-
88
90
11.8
-
15.5
-
23.1
-
28.9
-
18.5
23.9
36.0
49.5
Class-D audio amplifier
Typ
100
70
100
75
90
92
13.2
13.2
17.2
17.2
25.7
25.7
32.1
32.1
20.6
26.6
40.0
55.0
© NXP B.V. 21 June 2007. All rights reserved.
TDA8932B
Max
150
100
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Unit
dB
%
%
W
W
W
W
W
W
W
W
W
W
W
W
21 of 48
V
V
V
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