tc51whm616axbn65 TOSHIBA Semiconductor CORPORATION, tc51whm616axbn65 Datasheet - Page 8
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tc51whm616axbn65
Manufacturer Part Number
tc51whm616axbn65
Description
Tentative Toshiba Digital Integrated Circuit Silicon Gate Cmos
Manufacturer
TOSHIBA Semiconductor CORPORATION
Datasheet
1.TC51WHM616AXBN65.pdf
(11 pages)
Deep Power-down Timing
Power-on Timing
Provisions of Address Skew
Read
In case, multiple invalid address cycles shorter than t
valid address cycle over t
Write
In case, multiple invalid address cycles shorter than t
valid address cycle over t
Address
Address
CE2
V
CE2
CE1
CE1
CE1
CE1
WE
WE
DD
RC
WC
min must be needed during 10µs.
min with t
V
DD
min
WP
t
CS
min must be needed during 10µs.
t
CHP
t
CHC
WC
RC
min sustain over 10µs in a active status, as least one
min sustain over 10µs in a active status, as least one
over 10µs
over 10µs
t
DPD
t
CH
TC51WHM616AXBN65,70
t
t
t
WP
WC
RC
min
min
min
t
CH
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