tc51whm616axbn65 TOSHIBA Semiconductor CORPORATION, tc51whm616axbn65 Datasheet - Page 3

• Manufacturer Part Number: tc51whm616axbn65
• Description: Tentative Toshiba Digital Integrated Circuit Silicon Gate Cmos
• Manufacturer: TOSHIBA Semiconductor CORPORATION

ABSOLUTE MAXIMUM RATINGS (See Note 1)
DC RECOMMENDED OPERATING CONDITIONS
DC CHARACTERISTICS
CAPACITANCE
V
V
V
T
T
T
P
I
V
V
V
I
I
V
V
I
I
I
I
C
C
Note: This parameter is sampled periodically and is not 100% tested.
SYMBOL
OUT
IL
LO
DDO1
DDO2
DDS
DDSD
opr.
strg.
solder
DD
IN
OUT
D
DD
IH
IL
OH
OL
IN
OUT
SYMBOL
SYMBOL
SYMBOL
Input Leakage Current
Output Leakage Current
Output High Voltage
Output Low Voltage
Operating Current
Page Access Operating Current
Standby Current(MOS)
Deep Power-down Standby Current
Power Supply Voltage
Input Voltage
Output Voltage
Operating Temperature
Storage Temperature
Soldering Temperature (10 s)
Power Dissipation
Short Circuit Output Current
Power Supply Voltage
Input High Voltage
Input Low Voltage
Input Capacitance
Output Capacitance
(Ta = = = = 25°C, f = = = = 1 MHz)
PARAMETER
PARAMETER
(Ta = = = = − − − − 25°C to 85°C, V
PARAMETER
RATING
V
Output disable, V
I
I
CE2 = V
Page add. cycling, I
CE2 = 0.2 V
CE1
CE1
CE1
OH
OL
IN
= 1.0 mA
= 0 V to V
= − 0.5 mA
= V
= V
= V
IH
IL
IL
DD
, I
, CE2 = V
OUT
− 0.2 V, CE2 = V
TEST CONDITION
DD
DD
TEST CONDITION
= 0 mA
OUT
OUT
V
IH
V
= = = = 2.6 to 3.3 V) (See Note 3 to 4)
OUT
= 0 V to V
IN
,
(Ta = = = = − − − − 25°C to 85°C)
= 0 mA
= GND
= GND
−0.3*
MIN
2.6
2.0
* : V
DD
DD
− 0.2 V
V
t
t
TC51WHM616AXBN65,70
RC
PC
IH
IL
(Min) -1.0 V with 10 ns pulse width
(Max) V
= min
= min
−1.0 to 3.6
−1.0 to 3.6
−1.0 to 3.6
−55 to 150
−25 to 85
VALUE
TYP.
2.75
260
0.6
50


DD
+1.0 V with 10 ns pulse width
−1.0
−1.0
MIN
2.0





MAX
V
10
10
2002-08-22 3/11
DD
TYP.
MAX
3.3
0.4








+ 0.3*
MAX
+1.0
+1.0
100
0.4
50
25

5
UNIT
UNIT
UNIT
pF
pF
mA
°C
°C
°C
W
V
V
V
V
UNIT
mA
mA
µA
µA
µA
µA
V
V