tc51whm616axbn65 TOSHIBA Semiconductor CORPORATION, tc51whm616axbn65 Datasheet - Page 2

• Manufacturer Part Number: tc51whm616axbn65
• Description: Tentative Toshiba Digital Integrated Circuit Silicon Gate Cmos
• Manufacturer: TOSHIBA Semiconductor CORPORATION

BLOCK DIAGRAM
OPERATION MODE
Read(Word)
Read(Lower Byte)
Read(Upper Byte)
Write(Word)
Write(Lower Byte)
Write(Upper Byte)
Outputs Disabled
Standby
Deep Power-down Standby
Notes: L = Low-level Input(V
I/O10
I/O12
I/O13
I/O14
I/O15
I/O16
I/O11
CE2
I/O1
I/O2
I/O3
I/O4
I/O5
I/O6
I/O7
I/O8
I/O9
WE
CE1
OE
UB
LB
MODE
REFRESH
CONTROL
IL
), H = High-level Input(V
CE1
H
H
L
L
L
L
L
L
L
A10
A12
A13
A14
A15
A16
A17
A18
A19
A20
A21
A11
A9
CONTROL SIGNAL
CE2
CE
H
H
H
H
H
H
H
H
L
GENERATOR
ADDRESS
COUNTER
REFRESH
CE
OE
H
X
X
X
X
X
L
L
L
WE
H
H
H
H
L
L
L
X
X
IH
), X = V
A0 A1 A2 A3 A4 A5
LB
MEMORY CELL ARRAY
H
H
X
X
X
L
L
L
L
COLUMN ADDRESS
COLUMN ADDRESS
8,192 × 512 × 16
IH
SENSE AMP
(67,108,864)
DECODER
UB
BUFFER
H
H
X
X
X
or V
L
L
L
L
IL
, High-Z = High-impedance
Add
X
X
X
X
X
X
X
X
X
A6
A7 A8
I/O1 to I/O8
TC51WHM616AXBN65,70
High-Z
High-Z
High-Z
High-Z
Invalid
D
D
D
D
OUT
OUT
IN
IN
CE
I/O9 to I/O16
High-Z
Invalid
High-Z
High-Z
High-Z
D
D
V
GND
D
D
2002-08-22 2/11
OUT
OUT
DD
IN
IN
POWER
I
I
I
I
I
I
I
I
I
DDSD
DDO
DDO
DDO
DDO
DDO
DDO
DDO
DDS