tc51whm616axbn65 TOSHIBA Semiconductor CORPORATION, tc51whm616axbn65 Datasheet

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tc51whm616axbn65

Manufacturer Part Number
tc51whm616axbn65
Description
Tentative Toshiba Digital Integrated Circuit Silicon Gate Cmos
Manufacturer
TOSHIBA Semiconductor CORPORATION
Datasheet
TENTATIVE
4,194,304-WORD BY 16-BIT CMOS PSEUDO STATIC RAM
DESCRIPTION
4,194,304 words by 16 bits. Using Toshiba’s CMOS technology and advanced circuit techniques, it provides high
density, high speed and low power. The device operates single power supply. The device also features SRAM-like
W/R timing whereby the device is controlled by CE1 , OE , and WE on asynchronous. The device has the page
access operation. Page size is 8 words. The device also supports deep power-down mode, realizing low-power
standby.
FEATURES
PIN ASSIGNMENT
The TC51WHM616AXBN is a 67,108,864-bit pseudo static random access memory(PSRAM) organized as
C
D
G
H
Organized as 4,194,304 words by 16 bits
Single power supply voltage of 2.6 to 3.3 V
Direct TTL compatibility for all inputs and outputs
Deep power-down mode: Memory cell data invalid
Page operation mode:
Logic compatible with SRAM R/W ( WE ) pin
Standby current
A
B
E
F
Page read operation by 8 words
Standby
Deep power-down standby
I/O10 I/O11
I/O15 I/O14
I/O16
V SS
V DD
I/O9
A18
LB
1
I/O12
I/O13
A19
OE
UB
A8
2
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
(FBGA48)
A17
A21
A14
A12
A0
A3
A5
A9
3
A16
A15
A13
A10
A1
A4
A6
A7
(TOP VIEW)
4
CE1
I/O2
I/O4
I/O5
I/O6
WE
A11
A2
5
100 µA
V DD
CE2
V SS
5 µA
I/O1
I/O3
I/O7
I/O8
A20
6
Access Times:
Package:
PIN NAMES
Access Time
Page Access Time
P-TFBGA48-0811-0.75BZ (Weight:
I/O1 to I/O16 Data Inputs/Outputs
CE1
OE Access Time
A0 to A21
LB , UB
A0 to A2
GND
CE2
V
CE1
WE
OE
Access Time
DD
TC51WHM616AXBN65,70
Address Inputs
Page Address Inputs
Chip Enable Input
Chip select Input
Write Enable Input
Output Enable Input
Data Byte Control Inputs
Power
Ground
2002-08-22 1/11
65 ns
65 ns
25 ns
30 ns
TC51WHM616AXBN
65
70 ns
70 ns
25 ns
30 ns
70
g typ.)

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tc51whm616axbn65 Summary of contents

Page 1

... A8 A9 A10 A11 (FBGA48) • 100 µA 5 µA • 6 CE2 I/O1 I/ I/O7 I/O8 A20 TC51WHM616AXBN65,70 Access Times: TC51WHM616AXBN 65 Access Time 65 ns Access Time 65 ns CE1 OE Access Time 25 ns Page Access Time 30 ns Package: P-TFBGA48-0811-0.75BZ (Weight: PIN NAMES A0 to A21 Address Inputs ...

Page 2

... High-Z = High-impedance TC51WHM616AXBN65, GND I/O1 to I/O8 I/O9 to I/O16 OUT OUT X D High-Z OUT X High-Z D OUT Invalid IN X Invalid D IN ...

Page 3

... CE2 = OUT = V , CE2 = V , CE1 Page add. cycling, I OUT = V − 0.2 V, CE2 = V CE1 DD CE2 = 0.2 V TEST CONDITION = GND GND V OUT TC51WHM616AXBN65,70 VALUE −1.0 to 3.6 −1.0 to 3.6 −1.0 to 3.6 − −55 to 150 260 0.6 50 MIN TYP. MAX 2.6 2.75 3.3  + 0.3* 2 −0.3*  0 (Max) V +1.0 V with 10 ns pulse width ...

Page 4

... CE2 Pulse Width DPD t CE2 Hold from CE1 CHC t CE2 Hold from Power On CHP AC TEST CONDITIONS PARAMETER Output load Input pulse level Timing measurements Reference level TC51WHM616AXBN65,70 TC51WHM616AXBN 65 70 MIN MAX MIN 65 10000 70   65   65   25  ...

Page 5

... OEE t COE INDETERMINATE AOH OEE OUT OUT t COE ACC TC51WHM616AXBN65, ODO t BD VALID DATA OUT AOH AOH OUT OUT ODO * Maximum 8 words ...

Page 6

... D IN (See Note 9) I/O1 to I/O16 WRITE CYCLE CONTROLLED) Address A0 to A21 CE1 t CH CE2 OUT Hi-Z I/O1 to I/O16 D IN (See Note 9) I/O1 to I/O16 TC51WHM616AXBN65,70 (See Note ODW OEW Hi VALID DATA IN ...

Page 7

... WRITE CYCLE CONTROLLED) Address A0 to A21 CE1 t CH CE2 OUT Hi-Z I/O1 to I/O16 D IN (See Note 9) I/O1 to I/O16 TC51WHM616AXBN65,70 (See Note ODW t COE VALID DATA IN Hi-Z 2002-08-22 7/11 ...

Page 8

... DPD t CS min t CHC t CHP min sustain over 10µ active status, as least one RC over 10µs min sustain over 10µ active status, as least one WC min must be needed during 10µs. WP over 10µs TC51WHM616AXBN65, min RC t min WP t min WC 2002-08-22 8/11 ...

Page 9

... If CE1 goes LOW coincident with or after WE goes LOW, the outputs will remain at high impedance. (11) If CE1 goes HIGH coincident with or before WE goes HIGH, the outputs will remain at high impedance ns and t define the time at which the output goes the open condition and BD ODW TC51WHM616AXBN65,70 2002-08-22 9/11 ...

Page 10

... PACKAGE DIMENSIONS P-TFBGA48-0811-0.75BZ Weight: g (typ) 11.0 0 0. 0.75 2.875 0.375 (5.25) TC51WHM616AXBN65,70 Unit:mm A 2002-08-22 10/11 ...

Page 11

... TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. • The information contained herein is subject to change without notice. TC51WHM616AXBN65,70 000707EBA 2002-08-22 11/11 ...

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